Title: Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates

Journal Article · · Journal of Materials Chemistry C
DOI: https://doi.org/10.1039/C8TC01828F · OSTI ID:1440311
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [4];  [4];  [4];  [3]; ORCiD logo [4]
  1. Swiss Federal Laboratories for Materials Science and Technology, Dubendorf (Switzerland); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States); Fudan Univ., Shanghai (China)
  3. Colorado School of Mines, Golden, CO (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States)

The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1440311
Report Number(s):
NREL/JA-5K00-71393
Journal Information:
Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 23 Vol. 6; ISSN JMCCCX; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

Reversible displacive transformation in MnTe polymorphic semiconductor journal January 2020
Templated Growth of Metastable Polymorphs on Amorphous Substrates with Seed Layers journal January 2020
Wurtzite materials in alloys of rock salt compounds journal January 2020