Raman analysis of phonon modes in a short period AlN/GaN superlattice

Sarkar, Ketaki; Datta, Debopam; Gosztola, David J.; Shi, Fengyuan; Nicholls, Alan; Stroscio, Michael A.; Dutta, Mitra

doi:10.1016/j.spmi.2018.01.021

Title: Raman analysis of phonon modes in a short period AlN/GaN superlattice

Abstract

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E₂(high), A₁(LO) and the E₁(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying Al_xGa_1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A₁(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted usingmore » Bose-Einstein statistics was obtained.« less

Authors:

^[1];

^[1]; Gosztola, David J. ^[2];

^[1]; Nicholls, Alan ^[1]; Stroscio, Michael A. ^[1]; Dutta, Mitra ^[1]

Univ. of Illinois at Chicago, Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

Publication Date:: 2018-02-03

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)

OSTI Identifier:: 1439812

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Superlattices and Microstructures

Additional Journal Information:: Journal Volume: 115; Journal Issue: C; Journal ID: ISSN 0749-6036

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Aluminum nitride; Dielectric continuum model; Gallium nitride; Interface phonons; Raman spectroscopy; Superlattice

Citation Formats


                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice.  United States: N. p., 2018. 
Web.  doi:10.1016/j.spmi.2018.01.021.

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                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., & Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice.  United States.  https://doi.org/10.1016/j.spmi.2018.01.021

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                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Sat .  
"Raman analysis of phonon modes in a short period AlN/GaN superlattice".  United States.  https://doi.org/10.1016/j.spmi.2018.01.021.  https://www.osti.gov/servlets/purl/1439812.

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@article{osti_1439812,

  title        = {Raman analysis of phonon modes in a short period AlN/GaN superlattice},

  author       = {Sarkar, Ketaki and Datta, Debopam and Gosztola, David J. and Shi, Fengyuan and Nicholls, Alan and Stroscio, Michael A. and Dutta, Mitra},

  abstractNote = {AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.},

  doi          = {10.1016/j.spmi.2018.01.021},

  journal      = {Superlattices and Microstructures},

  number       = C,

  volume       = 115,

  place        = {United States},

  year         = {2018},

  month        = {2}

}

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Journal Article:

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https://doi.org/10.1016/j.spmi.2018.01.021

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Cited by: 4 works

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Figures / Tables:

Figure 1: A simple illustration of the superlattice structure used in the implementation of transfer matrix method. The general illustration contains alternating GaN and AlN layers as considered in the simulation.

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Works referenced in this record:

Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
journal, October 2003

Shi, Jun-jie
Physical Review B, Vol. 68, Issue 16
DOI: 10.1103/PhysRevB.68.165335

Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems
journal, October 1997

Yu, SeGi; Kim, K. W.; Stroscio, Michael A.
Journal of Applied Physics, Vol. 82, Issue 7
DOI: 10.1063/1.365649

Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice
journal, May 2001

Gleize, J.; Frandon, J.; Demangeot, F.
Materials Science and Engineering: B, Vol. 82, Issue 1-3
DOI: 10.1016/S0921-5107(00)00683-8

Phonons in a strained hexagonal GaN–AlN superlattice
journal, February 1999

Gleize, J.; Demangeot, F.; Frandon, J.
Applied Physics Letters, Vol. 74, Issue 5
DOI: 10.1063/1.122993

Phonons in III–V nitrides: Confined phonons and interface phonons
journal, October 2001

Dutta, M.; Alexson, D.; Bergman, L.
Physica E: Low-dimensional Systems and Nanostructures, Vol. 11, Issue 2-3
DOI: 10.1016/S1386-9477(01)00217-X

Micro-Raman thermometry in the presence of complex stresses in GaN devices
journal, June 2008

Beechem, T.; Christensen, A.; Graham, S.
Journal of Applied Physics, Vol. 103, Issue 12
DOI: 10.1063/1.2940131

Phonon mode behavior in strained wurtzite $Al N ∕ Ga N$ superlattices
journal, March 2005

Darakchieva, V.; Valcheva, E.; Paskov, P. P.
Physical Review B, Vol. 71, Issue 11
DOI: 10.1103/PhysRevB.71.115329

Raman-scattering studies of aluminum nitride at high pressure
journal, February 1993

Perlin, Piotr; Polian, Alain; Suski, Tadeusz
Physical Review B, Vol. 47, Issue 5
DOI: 10.1103/PhysRevB.47.2874

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions
journal, May 1998

Demangeot, F.; Groenen, J.; Frandon, J.
Applied Physics Letters, Vol. 72, Issue 21
DOI: 10.1063/1.121095

Raman scattering in thin‐film waveguides
journal, April 1973

Burns, G.; Dacol, F.; Marinace, J. C.
Applied Physics Letters, Vol. 22, Issue 8
DOI: 10.1063/1.1654671

Works referencing / citing this record:

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
journal, October 2018

Park, Kihoon; Mohamed, Ahmed; Dutta, Mitra
Scientific Reports, Vol. 8, Issue 1
DOI: 10.1038/s41598-018-34441-4

Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

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Title: Raman analysis of phonon modes in a short period AlN/GaN superlattice

Abstract

Citation Formats

Figures / Tables:

Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells journal, October 2003

Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems journal, October 1997

Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice journal, May 2001

Phonons in a strained hexagonal GaN–AlN superlattice journal, February 1999

Phonons in III–V nitrides: Confined phonons and interface phonons journal, October 2001

Micro-Raman thermometry in the presence of complex stresses in GaN devices journal, June 2008

Phonon mode behavior in strained wurtzite Al N ∕ Ga N superlattices journal, March 2005

Raman-scattering studies of aluminum nitride at high pressure journal, February 1993

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions journal, May 1998

Raman scattering in thin‐film waveguides journal, April 1973

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure journal, October 2018

Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
journal, October 2003

Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems
journal, October 1997

Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice
journal, May 2001

Phonons in a strained hexagonal GaN–AlN superlattice
journal, February 1999

Phonons in III–V nitrides: Confined phonons and interface phonons
journal, October 2001

Micro-Raman thermometry in the presence of complex stresses in GaN devices
journal, June 2008

Phonon mode behavior in strained wurtzite $Al N ∕ Ga N$ superlattices
journal, March 2005

Raman-scattering studies of aluminum nitride at high pressure
journal, February 1993

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions
journal, May 1998

Raman scattering in thin‐film waveguides
journal, April 1973

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
journal, October 2018