Raman analysis of phonon modes in a short period AlN/GaN superlattice

doi:10.1016/j.spmi.2018.01.021

Title: Raman analysis of phonon modes in a short period AlN/GaN superlattice

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Abstract

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E₂(high), A₁(LO) and the E₁(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying Al _xGa _1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A₁(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plotmore »« less

Authors:

^[1];

^[1]; Gosztola, David J. ^[2];

^[1]; Nicholls, Alan ^[1]; Stroscio, Michael A. ^[1]; Dutta, Mitra ^[1]

Univ. of Illinois at Chicago, Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

Publication Date:: 2018-02-03

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)

OSTI Identifier:: 1439812

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Superlattices and Microstructures

Additional Journal Information:: Journal Volume: 115; Journal Issue: C; Journal ID: ISSN 0749-6036

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Aluminum nitride; Dielectric continuum model; Gallium nitride; Interface phonons; Raman spectroscopy; Superlattice

Citation Formats


                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice.  United States: N. p., 2018. 
        Web.  doi:10.1016/j.spmi.2018.01.021.

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                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., & Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice.  United States.  doi:10.1016/j.spmi.2018.01.021.

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                    Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Sat .  
        "Raman analysis of phonon modes in a short period AlN/GaN superlattice".  United States.  doi:10.1016/j.spmi.2018.01.021.  https://www.osti.gov/servlets/purl/1439812.

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@article{osti_1439812,

  title        = {Raman analysis of phonon modes in a short period AlN/GaN superlattice},

  author       = {Sarkar, Ketaki and Datta, Debopam and Gosztola, David J. and Shi, Fengyuan and Nicholls, Alan and Stroscio, Michael A. and Dutta, Mitra},

  abstractNote = {AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.},

  doi          = {10.1016/j.spmi.2018.01.021},

  journal      = {Superlattices and Microstructures},

  number       = C,

  volume       = 115,

  place        = {United States},

  year         = {2018},

  month        = {2}

}

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DOI: 10.1016/j.spmi.2018.01.021

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