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Title: Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 K and perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.
Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ;  [5] ;  [6] ;  [7] ;  [8] ;  [4] ;  [3] ;  [9] ;  [2] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Salamanca (Spain). NANOLAB. Nanotechnology Group
  3. Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics
  4. Univ. of Florida, Gainesville, FL (United States). Dept. of Physics
  5. Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. for Superlattices and Microstructures. Inst. of Semiconductors
  6. Air Force Research Lab. (AFRL), Kirtland AFB, Albuquerque, NM (United States). Space Vehicles Directorate
  7. Hunter College, New York, NY (United States). Dept. of Physics and Astronomy
  8. National High Magnetic Field Lab. (MagLab), Tallahassee, FL (United States)
  9. Univ. of California, Berkeley, CA (United States). Dept. of Physics; Univ. of Pavia (Italy). Dept. of Physics
Publication Date:
Report Number(s):
SAND-2018-10199J
Journal ID: ISSN 1367-2630; 667954
Grant/Contract Number:
NA0003525; AC04-94AL85000; AC52-06NA25396; FG02-07ER46451; MAT2013-46308-C2-1-R; MAT2016-75955-C2-2-R; SA045U16; FFARB 15495-2018
Type:
Published Article
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Volume: 20; Journal Issue: 5; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Florida, Gainesville, FL (United States); Georgia Inst. of Technology, Atlanta, GA (United States); Univ. of Salamanca (Spain); Univ. of Pavia (Italy)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA); Ministry of Economy and Enterprise (MINECO) (Spain); European Regional Development Fund (ERDF); Junta of Castile and León; Ministry of Education, Universities and Research (MIUR) (Italy)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; topological insulators; quantum transport; magnetotransport; excitonic insulator
OSTI Identifier:
1439771
Alternate Identifier(s):
OSTI ID: 1474091

Yu, W., Clericò, V., Fuentevilla, C. Hernández, Shi, X., Jiang, Y., Saha, D., Lou, W. K., Chang, K., Huang, D. H., Gumbs, G., Smirnov, D., Stanton, C. J., Jiang, Z., Bellani, V., Meziani, Y., Diez, E., Pan, W., Hawkins, S. D., and Klem, J. F.. Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer. United States: N. p., Web. doi:10.1088/1367-2630/aac595.
Yu, W., Clericò, V., Fuentevilla, C. Hernández, Shi, X., Jiang, Y., Saha, D., Lou, W. K., Chang, K., Huang, D. H., Gumbs, G., Smirnov, D., Stanton, C. J., Jiang, Z., Bellani, V., Meziani, Y., Diez, E., Pan, W., Hawkins, S. D., & Klem, J. F.. Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer. United States. doi:10.1088/1367-2630/aac595.
Yu, W., Clericò, V., Fuentevilla, C. Hernández, Shi, X., Jiang, Y., Saha, D., Lou, W. K., Chang, K., Huang, D. H., Gumbs, G., Smirnov, D., Stanton, C. J., Jiang, Z., Bellani, V., Meziani, Y., Diez, E., Pan, W., Hawkins, S. D., and Klem, J. F.. 2018. "Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer". United States. doi:10.1088/1367-2630/aac595.
@article{osti_1439771,
title = {Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer},
author = {Yu, W. and Clericò, V. and Fuentevilla, C. Hernández and Shi, X. and Jiang, Y. and Saha, D. and Lou, W. K. and Chang, K. and Huang, D. H. and Gumbs, G. and Smirnov, D. and Stanton, C. J. and Jiang, Z. and Bellani, V. and Meziani, Y. and Diez, E. and Pan, W. and Hawkins, S. D. and Klem, J. F.},
abstractNote = {We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 K and perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.},
doi = {10.1088/1367-2630/aac595},
journal = {New Journal of Physics},
number = 5,
volume = 20,
place = {United States},
year = {2018},
month = {5}
}