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Title: Valley-dependent magnetoresistance in two-dimensional semiconductors

Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
Grant/Contract Number:  
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 20; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Sekine, Akihiko, and MacDonald, Allan H. Valley-dependent magnetoresistance in two-dimensional semiconductors. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.201301.
Sekine, Akihiko, & MacDonald, Allan H. Valley-dependent magnetoresistance in two-dimensional semiconductors. United States. doi:10.1103/PhysRevB.97.201301.
Sekine, Akihiko, and MacDonald, Allan H. Wed . "Valley-dependent magnetoresistance in two-dimensional semiconductors". United States. doi:10.1103/PhysRevB.97.201301.
title = {Valley-dependent magnetoresistance in two-dimensional semiconductors},
author = {Sekine, Akihiko and MacDonald, Allan H.},
abstractNote = {},
doi = {10.1103/PhysRevB.97.201301},
journal = {Physical Review B},
number = 20,
volume = 97,
place = {United States},
year = {2018},
month = {5}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.97.201301

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Cited by: 1 work
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