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Title: Strain engineering of the silicon-vacancy center in diamond

Abstract

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. Here, we identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [2];  [2];  [3];  [1];  [4];  [1];  [1];  [1];  [5];  [5];  [5];  [4];  [2];  [1]
+ Show Author Affiliations
  1. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences
  2. Univ. of Cambridge (United Kingdom). Cavendish Lab.
  3. Harvard Univ., Cambridge, MA (United States). Dept. of Physics; California Inst. of Technology (CalTech), Pasadena, CA (United States). Inst. for Quantum Information and Matter and Thomas J. Watson, Sr., Lab. of Applied Physics
  4. Harvard Univ., Cambridge, MA (United States). Dept. of Physics
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1464186
Alternate Identifier(s):
OSTI ID: 1439377
Report Number(s):
SAND-2018-0438J
Journal ID: ISSN 2469-9950; PRBMDO; 659973; TRN: US1902373
Grant/Contract Number:  
AC04-94AL85000; DMR-1231319; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, and Lončar, Marko. Strain engineering of the silicon-vacancy center in diamond. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.205444.
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Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, & Lončar, Marko. Strain engineering of the silicon-vacancy center in diamond. United States. https://doi.org/10.1103/PhysRevB.97.205444
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Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, and Lončar, Marko. Tue . "Strain engineering of the silicon-vacancy center in diamond". United States. https://doi.org/10.1103/PhysRevB.97.205444. https://www.osti.gov/servlets/purl/1464186.
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@article{osti_1464186,
title = {Strain engineering of the silicon-vacancy center in diamond},
author = {Meesala, Srujan and Sohn, Young-Ik and Pingault, Benjamin and Shao, Linbo and Atikian, Haig A. and Holzgrafe, Jeffrey and Gündoğan, Mustafa and Stavrakas, Camille and Sipahigil, Alp and Chia, Cleaven and Evans, Ruffin and Burek, Michael J. and Zhang, Mian and Wu, Lue and Pacheco, Jose L. and Abraham, John and Bielejec, Edward and Lukin, Mikhail D. and Atatüre, Mete and Lončar, Marko},
abstractNote = {We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. Here, we identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.},
doi = {10.1103/PhysRevB.97.205444},
journal = {Physical Review B},
number = 20,
volume = 97,
place = {United States},
year = {Tue May 29 00:00:00 EDT 2018},
month = {Tue May 29 00:00:00 EDT 2018}
}
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Journal Article:
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https://doi.org/10.1103/PhysRevB.97.205444
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Cited by: 111 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Electronic level structure of the SiV center (molecular structure shown in inset) at zero strain showing ground and excited manifolds with spin-orbit eigenstates. The four optical transitions A, B, C, and D at zero magnetic field, and splittings between orbital branches in the ground state (GS) andmore » excited state (ES), $Δ$gs and $Δ$es respectively are indicated. In the presence of a magnetic field, each orbital branch splits into two Zeeman sublevels. A spin-qubit can be defined in the sublevels of the lower orbital branch in the GS. (b) Schematic of the diamond cantilever used in the experiment showing the orientation of cantilevers and SiVs with respect to the diamond crystal axes. Four possible orientations of the highest symmetry axis of an SiV are indicated by the four arrows above the cantilever. Under application of strain, these can be grouped into axial (red) and transverse (blue) orientations. The inset shows the molecular structure of a transverse-orientation SiV with its internal coordinate frame as viewed in the plane normal to the [110] direction, which coincides with the Y -axis. The Z-axis is the highest symmetry axis, which defines the orientation of the SiV.« less
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    Works referencing / citing this record:

    Large‐Scale Fabrication of Highly Emissive Nanodiamonds by Chemical Vapor Deposition with Controlled Doping by SiV and GeV Centers from a Solid Source
    journal, December 2019

    • De Feudis, Mary; Tallaire, Alexandre; Nicolas, Louis
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    text, January 2019

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    text, January 2019

    An integrated nanophotonic quantum register based on silicon-vacancy spins in diamond
    text, January 2019

    Simulation of topological phases with color center arrays in phononic crystals
    text, January 2020

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      FIG. 1 (p. 2)figure
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      FIG. 5 (p. 6)figure
      FIG. 6 (p. 8)figure
      TABLE I (p. 10)table
      FIG. 7 (p. 11)figure
      FIG. 8 (p. 11)figure
      FIG. 9 (p. 11)figure
      FIG. 10 (p. 12)figure
      TABLE II (p. 12)table
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