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Title: Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

Abstract

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. In conclusion, our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [4]; ORCiD logo [4]; ORCiD logo [5];  [1]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of Washington, Seattle, WA (United States)
  2. Univ. of Hong Kong, Hong Kong (China)
  3. Carnegie Mellon Univ., Pittsburgh, PA (United States)
  4. National Institute for Materials Science, Ibaraki (Japan)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1439141
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Science
Additional Journal Information:
Journal Volume: 360; Journal Issue: 6394; Journal ID: ISSN 0036-8075
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, and Xu, Xiaodong. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. United States: N. p., 2018. Web. doi:10.1126/science.aar4851.
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, & Xu, Xiaodong. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. United States. doi:10.1126/science.aar4851.
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, and Xu, Xiaodong. Fri . "Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures". United States. doi:10.1126/science.aar4851. https://www.osti.gov/servlets/purl/1439141.
@article{osti_1439141,
title = {Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures},
author = {Song, Tiancheng and Cai, Xinghan and Tu, Matisse Wei-Yuan and Zhang, Xiaoou and Huang, Bevin and Wilson, Nathan P. and Seyler, Kyle L. and Zhu, Lin and Taniguchi, Takashi and Watanabe, Kenji and McGuire, Michael A. and Cobden, David H. and Xiao, Di and Yao, Wang and Xu, Xiaodong},
abstractNote = {Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. In conclusion, our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.},
doi = {10.1126/science.aar4851},
journal = {Science},
number = 6394,
volume = 360,
place = {United States},
year = {2018},
month = {6}
}

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    Works referencing / citing this record:

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