Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures
Abstract
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. In conclusion, our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
- Authors:
-
- Univ. of Washington, Seattle, WA (United States)
- Univ. of Hong Kong, Hong Kong (China)
- Carnegie Mellon Univ., Pittsburgh, PA (United States)
- National Institute for Materials Science, Ibaraki (Japan)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1439141
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science
- Additional Journal Information:
- Journal Volume: 360; Journal Issue: 6394; Journal ID: ISSN 0036-8075
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, and Xu, Xiaodong. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. United States: N. p., 2018.
Web. doi:10.1126/science.aar4851.
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, & Xu, Xiaodong. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. United States. https://doi.org/10.1126/science.aar4851
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, and Xu, Xiaodong. Fri .
"Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures". United States. https://doi.org/10.1126/science.aar4851. https://www.osti.gov/servlets/purl/1439141.
@article{osti_1439141,
title = {Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures},
author = {Song, Tiancheng and Cai, Xinghan and Tu, Matisse Wei-Yuan and Zhang, Xiaoou and Huang, Bevin and Wilson, Nathan P. and Seyler, Kyle L. and Zhu, Lin and Taniguchi, Takashi and Watanabe, Kenji and McGuire, Michael A. and Cobden, David H. and Xiao, Di and Yao, Wang and Xu, Xiaodong},
abstractNote = {Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. In conclusion, our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.},
doi = {10.1126/science.aar4851},
journal = {Science},
number = 6394,
volume = 360,
place = {United States},
year = {Fri Jun 15 00:00:00 EDT 2018},
month = {Fri Jun 15 00:00:00 EDT 2018}
}
Web of Science
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