Controlling the surface photovoltage on WSe2 by surface chemical modification

Liu, Ro-Ya; Ozawa, Kenichi; Terashima, Naoya; Natsui, Yuto; Feng, Baojie; Ito, Suguru; Chen, Wei-Chuan; Cheng, Cheng-Maw; Yamamoto, Susumu; Kato, Hiroo; Chiang, Tai-Chang; Matsuda, Iwao

doi:10.1063/1.5026351

Title: Controlling the surface photovoltage on WSe₂ by surface chemical modification

Abstract

The surface photovoltage (SPV) effect is key to the development of opto-electronic devices such as solar-cells and photo-detectors. For the prototypical transition metal dichalcogenide WSe₂, core level and valence band photoemission measurements show that the surface band bending of pristine cleaved surfaces can be readily modified by adsorption with K (an electron donor) or C₆₀ (an electron acceptor). Time-resolved pump-probe photoemission measurements reveal that the SPV for pristine cleaved surfaces is enhanced by K adsorption, but suppressed by C₆₀ adsorption, and yet the SPV relaxation time is substantially shortened in both cases. Evidently, adsorbate-induced electronic states act as electron-hole recombination centers that shorten the carrier lifetime.

Authors:

Liu, Ro-Ya ^[1];

^[2]; Terashima, Naoya ^[3]; Natsui, Yuto ^[3]; Feng, Baojie ^[4]; Ito, Suguru ^[5]; Chen, Wei-Chuan ^[6]; Cheng, Cheng-Maw ^[6]; Yamamoto, Susumu ^[5]; Kato, Hiroo ^[3]; Chiang, Tai-Chang ^[7];

^[5]

Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Tokyo (Japan)
Tokyo Inst. of Technology (Japan)
Hirosaki Univ. (Japan)
Hiroshima Univ. (Japan)
Univ. of Tokyo (Japan)
National Synchrotron Radiation Research Center, Hsinchu (Taiwan)
Univ. of Illinois at Urbana-Champaign, IL (United States)

Publication Date:: Thu May 24 00:00:00 EDT 2018

Research Org.:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1540188

Alternate Identifier(s):: OSTI ID: 1438965

Grant/Contract Number:: FG02-07ER46383

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 112; Journal Issue: 21; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Physics

Citation Formats


                    Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, and Matsuda, Iwao. Controlling the surface photovoltage on WSe2 by surface chemical modification.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5026351.

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                    Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, & Matsuda, Iwao. Controlling the surface photovoltage on WSe2 by surface chemical modification.  United States.  https://doi.org/10.1063/1.5026351

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                    Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, and Matsuda, Iwao. Thu .  
"Controlling the surface photovoltage on WSe2 by surface chemical modification".  United States.  https://doi.org/10.1063/1.5026351.  https://www.osti.gov/servlets/purl/1540188.

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@article{osti_1540188,

  title        = {Controlling the surface photovoltage on WSe2 by surface chemical modification},

  author       = {Liu, Ro-Ya and Ozawa, Kenichi and Terashima, Naoya and Natsui, Yuto and Feng, Baojie and Ito, Suguru and Chen, Wei-Chuan and Cheng, Cheng-Maw and Yamamoto, Susumu and Kato, Hiroo and Chiang, Tai-Chang and Matsuda, Iwao},

  abstractNote = {The surface photovoltage (SPV) effect is key to the development of opto-electronic devices such as solar-cells and photo-detectors. For the prototypical transition metal dichalcogenide WSe2, core level and valence band photoemission measurements show that the surface band bending of pristine cleaved surfaces can be readily modified by adsorption with K (an electron donor) or C60 (an electron acceptor). Time-resolved pump-probe photoemission measurements reveal that the SPV for pristine cleaved surfaces is enhanced by K adsorption, but suppressed by C60 adsorption, and yet the SPV relaxation time is substantially shortened in both cases. Evidently, adsorbate-induced electronic states act as electron-hole recombination centers that shorten the carrier lifetime.},

  doi          = {10.1063/1.5026351},

  journal      = {Applied Physics Letters},

  number       = 21,

  volume       = 112,

  place        = {United States},

  year         = {Thu May 24 00:00:00 EDT 2018},

  month        = {Thu May 24 00:00:00 EDT 2018}

}

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Works referencing / citing this record:

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
journal, December 2019

Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng
Physical Review B, Vol. 100, Issue 21
DOI: 10.1103/physrevb.100.214309

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
text, January 2019

Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng
arXiv
DOI: 10.48550/arxiv.1912.10556

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Title: Controlling the surface photovoltage on WSe2 by surface chemical modification

Abstract

Citation Formats

What Determines the Lifetime of Photoexcited Carriers on TiO 2 Surfaces? journal, December 2016

Photovoltaic Heterojunctions of Fullerenes with MoS 2 and WS 2 Monolayers journal, March 2014

Negative electronic compressibility and tunable spin splitting in WSe2 journal, September 2015

New soft X-ray beamline BL07LSU at SPring-8 journal, February 2014

Surface photovoltage phenomena: theory, experiment, and applications journal, December 1999

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors journal, September 1994

A photoemission study of barrier and transport properties of the interfaces of Au and Cu with WSe2(0001) surfaces journal, December 1994

Occupied and unoccupied electronic band structure of WSe 2 journal, April 1997

Van der Waals heterostructures journal, July 2013

Optical absorption and photoluminescence in pristine and photopolymerized C 60 solid films journal, February 1995

Statistics of the Recombinations of Holes and Electrons journal, September 1952

Cu and Ag deposition on layered p -type WSe 2 : Approaching the Schottky limit journal, October 1990

The optical properties of single crystals of WSe2 and MoTe2 journal, September 1963

Development of soft x-ray time-resolved photoemission spectroscopy system with a two-dimensional angle-resolved time-of-flight analyzer at SPring-8 BL07LSU journal, February 2012

Photoinduced charge transfer from vacuum-deposited molecules to single-layer transition metal dichalcogenides journal, May 2016

WSe 2 : Optical and electrical properties as related to surface passivation of recombination centers journal, August 1989

Surface photovoltage effect at the p -WSe 2 :Rb surface: Photoemission experiment and numerical model journal, February 2011

Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity journal, March 1987

Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2 journal, August 2014

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/ WSe 2 (0001) interfaces journal, November 1993

Charge carrier dynamics at the SiO2/Si(100) surface: a time-resolved photoemission study with combined laser and synchrotron radiation journal, April 2004

Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2 text, January 2013

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide journal, December 2019

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide text, January 2019

Title: Controlling the surface photovoltage on WSe₂ by surface chemical modification

What Determines the Lifetime of Photoexcited Carriers on TiO ₂ Surfaces?
journal, December 2016

Photovoltaic Heterojunctions of Fullerenes with MoS ₂ and WS ₂ Monolayers
journal, March 2014

Negative electronic compressibility and tunable spin splitting in WSe2
journal, September 2015

New soft X-ray beamline BL07LSU at SPring-8
journal, February 2014

Surface photovoltage phenomena: theory, experiment, and applications
journal, December 1999

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
journal, September 1994

A photoemission study of barrier and transport properties of the interfaces of Au and Cu with WSe2(0001) surfaces
journal, December 1994

Occupied and unoccupied electronic band structure of ${WSe}_{2}$
journal, April 1997

Van der Waals heterostructures
journal, July 2013

Optical absorption and photoluminescence in pristine and photopolymerized $C_{60}$ solid films
journal, February 1995

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Cu and Ag deposition on layered p -type ${WSe}_{2}$ : Approaching the Schottky limit
journal, October 1990

The optical properties of single crystals of WSe2 and MoTe2
journal, September 1963

Development of soft x-ray time-resolved photoemission spectroscopy system with a two-dimensional angle-resolved time-of-flight analyzer at SPring-8 BL07LSU
journal, February 2012

Photoinduced charge transfer from vacuum-deposited molecules to single-layer transition metal dichalcogenides
journal, May 2016

${WSe}_{2}$ : Optical and electrical properties as related to surface passivation of recombination centers
journal, August 1989

Surface photovoltage effect at the $p$ -WSe $_{2}$ :Rb surface: Photoemission experiment and numerical model
journal, February 2011

Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
journal, March 1987

Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
journal, August 2014

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/ ${WSe}_{2}$ (0001) interfaces
journal, November 1993

Charge carrier dynamics at the SiO2/Si(100) surface: a time-resolved photoemission study with combined laser and synchrotron radiation
journal, April 2004

Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2
text, January 2013

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
journal, December 2019

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
text, January 2019