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Title: Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

Doped semiconductors are the most important building elements for modern electronic devices. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS 2, Cu intercalated bilayer SnS 2 obtained by this technique displays a hole field-effect mobility of ~40 cm 2 V -1 s -1, and the obtained Co-SnS 2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene. Combining this intercalation technique with lithography, an atomically seamless p–n–metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thinmore » materials.« less
Authors:
 [1] ;  [2] ;  [3] ; ORCiD logo [3] ; ORCiD logo [4] ;  [3] ;  [3] ;  [3] ;  [3] ;  [3] ;  [4] ;  [5] ;  [6] ;  [7]
  1. Beihang Univ., Beijing (China); Stanford Univ., CA (United States)
  2. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)
  3. Stanford Univ., CA (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Chinese Academy of Sciences, Beijing (China)
  7. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-76SF00515; AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Nature Nanotechnology
Additional Journal Information:
Journal Volume: 13; Journal Issue: 4; Journal ID: ISSN 1748-3387
Publisher:
Nature Publishing Group
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1438819

Gong, Yongji, Yuan, Hongtao, Wu, Chun-Lan, Tang, Peizhe, Yang, Shi-Ze, Yang, Ankun, Li, Guodong, Liu, Bofei, van de Groep, Jorik, Brongersma, Mark L., Chisholm, Matthew F., Zhang, Shou-Cheng, Zhou, Wu, and Cui, Yi. Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics. United States: N. p., Web. doi:10.1038/s41565-018-0069-3.
Gong, Yongji, Yuan, Hongtao, Wu, Chun-Lan, Tang, Peizhe, Yang, Shi-Ze, Yang, Ankun, Li, Guodong, Liu, Bofei, van de Groep, Jorik, Brongersma, Mark L., Chisholm, Matthew F., Zhang, Shou-Cheng, Zhou, Wu, & Cui, Yi. Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics. United States. doi:10.1038/s41565-018-0069-3.
Gong, Yongji, Yuan, Hongtao, Wu, Chun-Lan, Tang, Peizhe, Yang, Shi-Ze, Yang, Ankun, Li, Guodong, Liu, Bofei, van de Groep, Jorik, Brongersma, Mark L., Chisholm, Matthew F., Zhang, Shou-Cheng, Zhou, Wu, and Cui, Yi. 2018. "Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics". United States. doi:10.1038/s41565-018-0069-3.
@article{osti_1438819,
title = {Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics},
author = {Gong, Yongji and Yuan, Hongtao and Wu, Chun-Lan and Tang, Peizhe and Yang, Shi-Ze and Yang, Ankun and Li, Guodong and Liu, Bofei and van de Groep, Jorik and Brongersma, Mark L. and Chisholm, Matthew F. and Zhang, Shou-Cheng and Zhou, Wu and Cui, Yi},
abstractNote = {Doped semiconductors are the most important building elements for modern electronic devices. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS2, Cu intercalated bilayer SnS2 obtained by this technique displays a hole field-effect mobility of ~40 cm2 V-1 s-1, and the obtained Co-SnS2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene. Combining this intercalation technique with lithography, an atomically seamless p–n–metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.},
doi = {10.1038/s41565-018-0069-3},
journal = {Nature Nanotechnology},
number = 4,
volume = 13,
place = {United States},
year = {2018},
month = {2}
}

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