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Title: The promise of solution-processed Fe 2GeS 4 thin films in iron chalcogenide photovoltaics

The olivine Fe 2GeS 4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2GeS 4 thin films as the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2GeS 4.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [3] ; ORCiD logo [4] ; ORCiD logo [5] ; ORCiD logo [6]
  1. Delaware State Univ., Dover (United States). Dept. of Chemistry
  2. Delaware State Univ., Dover (United States). Dept. of Chemistry; Rowan Univ., Glassboro, NJ (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Univ. of Luxembourg, Belvaux (Luxembourg)
  5. Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion
  6. Delaware State Univ., Dover (United States). Dept. of Chemistry; Univ. of Delaware, Newark, DE (United States). Dept. of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
EE0006322; AC02-76SF00515; 1458980; 1435716
Type:
Accepted Manuscript
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 53; Journal Issue: 10; Journal ID: ISSN 0022-2461
Publisher:
Springer
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 25 ENERGY STORAGE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1438812

Liu, Mimi, Berg, Dominik M., Hwang, Po-Yu, Lai, Cheng-Yu, Stone, Kevin H., Babbe, Finn, Dobson, Kevin D., and Radu, Daniela R.. The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics. United States: N. p., Web. doi:10.1007/s10853-018-2082-1.
Liu, Mimi, Berg, Dominik M., Hwang, Po-Yu, Lai, Cheng-Yu, Stone, Kevin H., Babbe, Finn, Dobson, Kevin D., & Radu, Daniela R.. The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics. United States. doi:10.1007/s10853-018-2082-1.
Liu, Mimi, Berg, Dominik M., Hwang, Po-Yu, Lai, Cheng-Yu, Stone, Kevin H., Babbe, Finn, Dobson, Kevin D., and Radu, Daniela R.. 2018. "The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics". United States. doi:10.1007/s10853-018-2082-1.
@article{osti_1438812,
title = {The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics},
author = {Liu, Mimi and Berg, Dominik M. and Hwang, Po-Yu and Lai, Cheng-Yu and Stone, Kevin H. and Babbe, Finn and Dobson, Kevin D. and Radu, Daniela R.},
abstractNote = {The olivine Fe2GeS4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe2GeS4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe2GeS4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe2GeS4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe2GeS4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe2GeS4 thin films as the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV are observed, while the use of the Fe2GeS4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe2GeS4.},
doi = {10.1007/s10853-018-2082-1},
journal = {Journal of Materials Science},
number = 10,
volume = 53,
place = {United States},
year = {2018},
month = {2}
}