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Title: Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Authors:
 [1]; ORCiD logo [2];  [2];  [3];  [3]
  1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
  2. Electrical and Computer Engineering, University of Texas Austin, Austin, Texas 78705, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1438508
Grant/Contract Number:  
AR0000672
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., and Bowers, John E. Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy. United States: N. p., 2018. Web. doi:10.1063/1.5031772.
Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., & Bowers, John E. Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy. United States. doi:10.1063/1.5031772.
Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., and Bowers, John E. Mon . "Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy". United States. doi:10.1063/1.5031772.
@article{osti_1438508,
title = {Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy},
author = {Jung, Daehwan and Ironside, Daniel J. and Bank, Seth R. and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.5031772},
journal = {Journal of Applied Physics},
number = 20,
volume = 123,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5031772

Citation Metrics:
Cited by: 5 works
Citation information provided by
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