Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.5031772

Title: Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Journal Article · 22 May 2018 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5031772 · OSTI ID:1438508

Jung, Daehwan;

; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000672

OSTI ID:: 1438508

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 123; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (29)

Formation of quantum wires and quantum dots on buffer layers grown on InP substrates Stintz, A.; Rotter, T. J.; Malloy, K. J. Journal of Crystal Growth, Vol. 255, Issue 3-4 https://doi.org/10.1016/S0022-0248(03)01267-3	journal	August 2003
Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD Wang, Benzhong; Chua, Soo-Jin; Wang, Zhijie Physica E: Low-dimensional Systems and Nanostructures, Vol. 8, Issue 3 https://doi.org/10.1016/S1386-9477(00)00122-3	journal	September 2000
Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui Journal of Crystal Growth, Vol. 259, Issue 3 https://doi.org/10.1016/j.jcrysgro.2003.07.018	journal	December 2003
Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100) Sritirawisarn, N.; van Otten, F. W. M.; Eijkemans, T. J. Journal of Crystal Growth, Vol. 305, Issue 1 https://doi.org/10.1016/j.jcrysgro.2007.04.035	journal	July 2007
High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity Banyoudeh, Saddam; Reithmaier, Johann Peter Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.03.027	journal	September 2015
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique Shi, Bei; Lau, Kei May Journal of Crystal Growth, Vol. 433 https://doi.org/10.1016/j.jcrysgro.2015.09.023	journal	January 2016
Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S. Progress in Quantum Electronics, Vol. 38, Issue 6 https://doi.org/10.1016/j.pquantelec.2014.11.001	journal	November 2014
Intermixing and shape changes during the formation of InAs self-assembled quantum dots Garcı́a, J. M.; Medeiros-Ribeiro, G.; Schmidt, K. Applied Physics Letters, Vol. 71, Issue 14 https://doi.org/10.1063/1.119772	journal	October 1997
Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) Brault, J.; Gendry, M.; Grenet, G. Applied Physics Letters, Vol. 73, Issue 20 https://doi.org/10.1063/1.122634	journal	November 1998
Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures González, L.; García, J. M.; García, R. Applied Physics Letters, Vol. 76, Issue 9 https://doi.org/10.1063/1.125952	journal	February 2000
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm Paranthoen, C.; Bertru, N.; Dehaese, O. Applied Physics Letters, Vol. 78, Issue 12 https://doi.org/10.1063/1.1356449	journal	March 2001
Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates Li, Hanxuan; Daniels-Race, Theda; Hasan, Mohamed-Ali Applied Physics Letters, Vol. 80, Issue 8 https://doi.org/10.1063/1.1452784	journal	February 2002
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) Brault, J.; Gendry, M.; Grenet, G. Journal of Applied Physics, Vol. 92, Issue 1 https://doi.org/10.1063/1.1481959	journal	July 2002
Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui Applied Physics Letters, Vol. 83, Issue 18 https://doi.org/10.1063/1.1623947	journal	November 2003
Ripening and annealing effects in InAs/GaAs(001) quantum dot formation Krzyzewski, T. J.; Jones, T. S. Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1759788	journal	July 2004
High-gain and low-threshold InAs quantum-dot lasers on InP Caroff, P.; Paranthoen, C.; Platz, C. Applied Physics Letters, Vol. 87, Issue 24 https://doi.org/10.1063/1.2146063	journal	December 2005
Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices Lei, W.; Chen, Y. H.; Jin, P. Applied Physics Letters, Vol. 88, Issue 6 https://doi.org/10.1063/1.2172288	journal	February 2006
Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers Cui, K.; Robertson, M. D.; Robinson, B. J. Journal of Applied Physics, Vol. 105, Issue 9 https://doi.org/10.1063/1.3122596	journal	May 2009
Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) Gilfert, C.; Pavelescu, E. -M.; Reithmaier, J. P. Applied Physics Letters, Vol. 96, Issue 19 https://doi.org/10.1063/1.3428956	journal	May 2010
High-gain wavelength-stabilized 1.55 μ m InAs/InP(100) based lasers with reduced number of quantum dot active layers Sichkovskyi, V. I.; Waniczek, M.; Reithmaier, J. P. Applied Physics Letters, Vol. 102, Issue 22 https://doi.org/10.1063/1.4809730	journal	June 2013
Comparison of InAs quantum dots grown on GaInAsP and InP Barik, S.; Tan, H. H.; Jagadish, C. Nanotechnology, Vol. 17, Issue 8 https://doi.org/10.1088/0957-4484/17/8/010	journal	March 2006
Indium surface diffusion on InAs ( 2 × 4 ) reconstructed wetting layers on GaAs(001) Rosini, Marcello; Righi, Maria Clelia; Kratzer, Peter Physical Review B, Vol. 79, Issue 7 https://doi.org/10.1103/PhysRevB.79.075302	journal	February 2009
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers Eliseev, P. G.; Li, H.; Liu, T. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 7, Issue 2 https://doi.org/10.1109/2944.954121	journal	January 2001
High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser Bhowmick, Sishir; Baten, Md Zunaid; Frost, Thomas IEEE Journal of Quantum Electronics, Vol. 50, Issue 1 https://doi.org/10.1109/JQE.2013.2290943	journal	January 2014
InAs-InAlGaAs quantum dot DFB lasers based on InP [001 IEEE Photonics Technology Letters, Vol. 18, Issue 4 https://doi.org/10.1109/LPT.2006.870187	journal	February 2006
Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots Poole, P. J.; McCaffrey, J.; Williams, R. L. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 4 https://doi.org/10.1116/1.1376381	journal	January 2001
MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Liu, Alan Y.; Zhang, Chong; Snyder, Andrew Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4864148	journal	March 2014
Long-wavelength quantum dot FP and DFB lasers for high temperature applications Kageyama, T.; Takada, K.; Nishi, K. SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.905873	conference	February 2012
Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si Liu, Alan Y.; Peters, Jon; Huang, Xue Optics Letters, Vol. 42, Issue 2 https://doi.org/10.1364/OL.42.000338	journal	January 2017

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