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This content will become publicly available on May 23, 2019

Title: Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Authors:
 [1] ; ORCiD logo [2] ;  [2] ;  [3] ;  [3]
  1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
  2. Electrical and Computer Engineering, University of Texas Austin, Austin, Texas 78705, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Grant/Contract Number:
AR0000672
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 20; Related Information: CHORUS Timestamp: 2018-05-23 11:09:14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1438508