Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.5031772

Title: Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Abstract

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

Authors:

Jung, Daehwan;

; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

Publication Date:: Wed May 23 00:00:00 EDT 2018

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1438508

Grant/Contract Number:: AR0000672

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 20; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., and Bowers, John E. Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5031772.

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                    Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., & Bowers, John E. Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy.  United States.  https://doi.org/10.1063/1.5031772

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                    Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., and Bowers, John E. Wed .  
"Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy".  United States.  https://doi.org/10.1063/1.5031772.

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@article{osti_1438508,

  title        = {Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy},

  author       = {Jung, Daehwan and Ironside, Daniel J. and Bank, Seth R. and Gossard, Arthur C. and Bowers, John E.},

  abstractNote = {We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.},

  doi          = {10.1063/1.5031772},

  journal      = {Journal of Applied Physics},

  number       = 20,

  volume       = 123,

  place        = {United States},

  year         = {Wed May 23 00:00:00 EDT 2018},

  month        = {Wed May 23 00:00:00 EDT 2018}

}

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Title: Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Abstract

Citation Formats

InAs-InAlGaAs quantum dot DFB lasers based on InP [001 journal, February 2006

Formation of quantum wires and quantum dots on buffer layers grown on InP substrates journal, August 2003

Ripening and annealing effects in InAs/GaAs(001) quantum dot formation journal, July 2004

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers journal, January 2001

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100) journal, July 2007

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) journal, May 2010

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices journal, November 2014

High-gain and low-threshold InAs quantum-dot lasers on InP journal, December 2005

Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates journal, February 2002

Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers journal, May 2009

Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si journal, January 2017

Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices journal, February 2006

Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures journal, February 2000

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity journal, September 2015

Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As journal, November 2003

Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer journal, December 2003

Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) journal, July 2002

High-gain wavelength-stabilized 1.55 μ m InAs/InP(100) based lasers with reduced number of quantum dot active layers journal, June 2013

Intermixing and shape changes during the formation of InAs self-assembled quantum dots journal, October 1997

Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique journal, January 2016

Indium surface diffusion on InAs ( 2 × 4 ) reconstructed wetting layers on GaAs(001) journal, February 2009

Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) journal, November 1998

Comparison of InAs quantum dots grown on GaInAsP and InP journal, March 2006

MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon journal, March 2014

Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots journal, January 2001

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm journal, March 2001

Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD journal, September 2000

Long-wavelength quantum dot FP and DFB lasers for high temperature applications conference, February 2012

InAs-InAlGaAs quantum dot DFB lasers based on InP [001
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Formation of quantum wires and quantum dots on buffer layers grown on InP substrates
journal, August 2003

Ripening and annealing effects in InAs/GaAs(001) quantum dot formation
journal, July 2004

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
journal, January 2001

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)
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Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)
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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
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High-gain and low-threshold InAs quantum-dot lasers on InP
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Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
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Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
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