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Title: Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)

Abstract

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. Furthermore, the integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [1];  [1];  [1];  [1];  [3];  [1]
  1. Univ. of Texas at Arlington, Arlington, TX (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. of Toronto, Toronto, ON (Canada)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ., Nanjing (People's Republic of China)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1438311
Report Number(s):
BNL-205667-2018-JAAM
Journal ID: ISSN 0250-4707; PII: 1544
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Bulletin of Materials Science
Additional Journal Information:
Journal Volume: 41; Journal Issue: 1; Journal ID: ISSN 0250-4707
Publisher:
Indian Academy of Sciences/Springer
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Superconductivity; Single crystal; Molecular beam epitaxy; Buffer layer

Citation Formats

Ahmadi-Majlana, K., Su, Dong, Zhang, H., Shen, X., Moghadam, M. J., Chrysler, M., Conlin, P., Hensley, R., Wei, J. Y. T., and Ngai, J. H. Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001). United States: N. p., 2018. Web. doi:10.1007/s12034-017-1544-4.
Ahmadi-Majlana, K., Su, Dong, Zhang, H., Shen, X., Moghadam, M. J., Chrysler, M., Conlin, P., Hensley, R., Wei, J. Y. T., & Ngai, J. H. Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001). United States. doi:10.1007/s12034-017-1544-4.
Ahmadi-Majlana, K., Su, Dong, Zhang, H., Shen, X., Moghadam, M. J., Chrysler, M., Conlin, P., Hensley, R., Wei, J. Y. T., and Ngai, J. H. Thu . "Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)". United States. doi:10.1007/s12034-017-1544-4. https://www.osti.gov/servlets/purl/1438311.
@article{osti_1438311,
title = {Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)},
author = {Ahmadi-Majlana, K. and Su, Dong and Zhang, H. and Shen, X. and Moghadam, M. J. and Chrysler, M. and Conlin, P. and Hensley, R. and Wei, J. Y. T. and Ngai, J. H.},
abstractNote = {Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. Furthermore, the integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.},
doi = {10.1007/s12034-017-1544-4},
journal = {Bulletin of Materials Science},
number = 1,
volume = 41,
place = {United States},
year = {2018},
month = {2}
}

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    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019


    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019