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Title: Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.
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  1. Univ. of Texas-Arlington, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. New York Univ. Shanghai, Shanghai (China)
Publication Date:
Report Number(s):
Journal ID: ISSN 0003-6951
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 19; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
29 ENERGY PLANNING, POLICY AND ECONOMY; LaTiO3 SrTiO3 heterostructure; Fermi liquid; Mott driven transition
OSTI Identifier: