skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Abstract

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Authors:
 [1];  [2];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [3];  [4]; ORCiD logo [2];  [1]
  1. Univ. of Texas-Arlington, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. New York Univ. Shanghai, Shanghai (China)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1438310
Alternate Identifier(s):
OSTI ID: 1630173
Report Number(s):
BNL-205666-2018-JAAM
Journal ID: ISSN 0003-6951; TRN: US1900416
Grant/Contract Number:  
SC0012704; DMR-1508530
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY; LaTiO3 SrTiO3 heterostructure; Fermi liquid; Mott driven transition

Citation Formats

Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States: N. p., 2018. Web. doi:10.1063/1.5018069.
Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., & Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States. doi:10.1063/1.5018069.
Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Mon . "Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness". United States. doi:10.1063/1.5018069. https://www.osti.gov/servlets/purl/1438310.
@article{osti_1438310,
title = {Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness},
author = {Ahmadi-Majlan, Kamyar and Chen, Tongjie and Lim, Zheng Hui and Conlin, Patrick and Hensley, Ricky and Chrysler, Matthew and Su, Dong and Chen, Hanghui and Kumah, Divine P. and Ngai, Joseph H.},
abstractNote = {Here, we present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.},
doi = {10.1063/1.5018069},
journal = {Applied Physics Letters},
number = 19,
volume = 112,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces
journal, September 2011

  • Li, Lu; Richter, C.; Mannhart, J.
  • Nature Physics, Vol. 7, Issue 10, p. 762-766
  • DOI: 10.1038/nphys2080

Electrostatic Modulation of LaAlO 3 /SrTiO 3 Interface Transport in an Electric Double-Layer Transistor
journal, November 2013

  • Lin, Wei-Nan; Ding, Jun-Feng; Wu, Shu-Xiang
  • Advanced Materials Interfaces, Vol. 1, Issue 1
  • DOI: 10.1002/admi.201300001

Electronic transition in La 1 x Sr x TiO 3
journal, October 1999


Oxide 2D electron gases as a route for high carrier densities on (001) Si
journal, May 2015

  • Kornblum, Lior; Jin, Eric N.; Kumah, Divine P.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921437

Optical Study of the Free-Carrier Response of LaTiO 3 / SrTiO 3 Superlattices
journal, December 2007


Oxide Interfaces--An Opportunity for Electronics
journal, March 2010


Flexoelectric Effect in Solids
journal, July 2013


Surface depletion in doped SrTiO3 thin films
journal, March 2004

  • Ohtomo, A.; Hwang, H. Y.
  • Applied Physics Letters, Vol. 84, Issue 10
  • DOI: 10.1063/1.1668329

Photovoltaic effect for narrow-gap Mott insulators
journal, September 2010


Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations
journal, February 2016


Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039

Turning SrTiO 3 into a Mott insulator
journal, November 2014


Predictive Control over Charge Density in the Two-Dimensional Electron Gas at the Polar-Nonpolar NdTiO 3 / SrTiO 3 Interface
journal, September 2016


Filling dependence of electronic properties on the verge of metal–Mott-insulator transition in Sr 1 x La x TiO 3
journal, April 1993


Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction
journal, February 2014

  • Kumah, Divine P.; Disa, Ankit S.; Ngai, Joseph H.
  • Advanced Materials, Vol. 26, Issue 12
  • DOI: 10.1002/adma.201304256

Surface and interface chemical composition of thin epitaxial SrTiO3 and BaTiO3 films: Photoemission investigation
journal, August 2004

  • Amy, F.; Wan, A.; Kahn, A.
  • Journal of Applied Physics, Vol. 96, Issue 3
  • DOI: 10.1063/1.1765855

The atomic structure and polarization of strained SrTiO3/Si
journal, December 2010

  • Kumah, D. P.; Reiner, J. W.; Segal, Y.
  • Applied Physics Letters, Vol. 97, Issue 25
  • DOI: 10.1063/1.3529460

Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial SrTiO 3 / Si
journal, November 2010


Electric field control of the LaAlO3/SrTiO3 interface ground state
journal, December 2008

  • Caviglia, A. D.; Gariglio, S.; Reyren, N.
  • Nature, Vol. 456, Issue 7222
  • DOI: 10.1038/nature07576

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped SrTiO 3
journal, June 2010


Towards Two-Dimensional Metallic Behavior at LaAlO 3 / SrTiO 3 Interfaces
journal, May 2009


A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004


Energy Bands for KNi F 3 , SrTi O 3 , KMo O 3 , and KTa O 3
journal, December 1972


Atomic-scale control of competing electronic phases in ultrathin LaNiO3
journal, April 2014

  • King, P. D. C.; Wei, H. I.; Nie, Y. F.
  • Nature Nanotechnology, Vol. 9, Issue 6
  • DOI: 10.1038/nnano.2014.59

Photoemission from Buried Interfaces in SrTiO 3 / LaTiO 3 Superlattices
journal, August 2006


Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces
journal, December 2011

  • Moetakef, Pouya; Cain, Tyler A.; Ouellette, Daniel G.
  • Applied Physics Letters, Vol. 99, Issue 23
  • DOI: 10.1063/1.3669402

Artificial charge-modulationin atomic-scale perovskite titanate superlattices
journal, September 2002

  • Ohtomo, A.; Muller, D. A.; Grazul, J. L.
  • Nature, Vol. 419, Issue 6905
  • DOI: 10.1038/nature00977

Nonlinear Hall effect and multichannel conduction in LaTiO 3 / SrTiO 3 superlattices
journal, November 2010


Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
journal, July 2011


A high density two-dimensional electron gas in an oxide heterostructure on Si (001)
journal, November 2014

  • Jin, E. N.; Kornblum, L.; Kumah, D. P.
  • APL Materials, Vol. 2, Issue 11
  • DOI: 10.1063/1.4902433

Ultrafast Separation of Photodoped Carriers in Mott Antiferromagnets
journal, August 2014


Correlated Oxide Physics and Electronics
journal, July 2014


Electronic reconstruction at an interface between a Mott insulator and a band insulator
journal, April 2004


Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO 3
journal, November 2012


Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3
journal, October 2010

  • Biscaras, J.; Bergeal, N.; Kushwaha, A.
  • Nature Communications, Vol. 1, Issue 1
  • DOI: 10.1038/ncomms1084

    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019