Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

doi:10.1063/1.5018069

Title: Tuning metal-insulator behavior in LaTiO₃/SrTiO₃ heterostructures integrated directly on Si(100) through control of atomic layer thickness

Journal Article · 07 May 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5018069 · OSTI ID:1438310

Ahmadi-Majlan, Kamyar ^[1]; Chen, Tongjie ^[2]; Lim, Zheng Hui ^[1];

^[1]; Hensley, Ricky ^[1]; Chrysler, Matthew ^[1];

^[3]; Chen, Hanghui ^[4];

^[2]; Ngai, Joseph H. ^[1]

Univ. of Texas-Arlington, Arlington, TX (United States)
North Carolina State Univ., Raleigh, NC (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
New York Univ. Shanghai, Shanghai (China)

Here, we present electrical and structural characterization of epitaxial LaTiO₃/SrTiO₃ heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO₃ well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; DMR-1508530

OSTI ID:: 1438310

Alternate ID(s):: OSTI ID: 1630173

Report Number(s):: BNL-205666-2018-JAAM; TRN: US1900416

Journal Information:: Applied Physics Letters, Vol. 112, Issue 19; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Conductive Oxide Interfaces for Field Effect Devices Kornblum, Lior Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900480	journal	June 2019
Interfacial structure of SrZr _x Ti ₁₋ _x O ₃ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui Applied Physics Letters, Vol. 113, Issue 20 https://doi.org/10.1063/1.5046394	journal	November 2018
Surface-induced thickness limit of conducting La-doped SrTiO ₃ thin films Shin, Yeong Jae; Lau, Claudia; Lee, Sangjae Applied Physics Letters, Vol. 115, Issue 16 https://doi.org/10.1063/1.5111771	journal	October 2019
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui arXiv https://doi.org/10.48550/arxiv.1806.11140	text	January 2018
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Title: Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

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Title: Tuning metal-insulator behavior in LaTiO₃/SrTiO₃ heterostructures integrated directly on Si(100) through control of atomic layer thickness