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Title: Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Abstract

Here, we present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Authors:
 [1];  [2];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [3];  [4]; ORCiD logo [2];  [1]
+ Show Author Affiliations
  1. Univ. of Texas-Arlington, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. New York Univ. Shanghai, Shanghai (China)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1438310
Alternate Identifier(s):
OSTI ID: 1630173
Report Number(s):
BNL-205666-2018-JAAM
Journal ID: ISSN 0003-6951; TRN: US1900416
Grant/Contract Number:  
SC0012704; DMR-1508530
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY; LaTiO3 SrTiO3 heterostructure; Fermi liquid; Mott driven transition

Citation Formats

Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States: N. p., 2018. Web. doi:10.1063/1.5018069.
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Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., & Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States. https://doi.org/10.1063/1.5018069
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Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Mon . "Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness". United States. https://doi.org/10.1063/1.5018069. https://www.osti.gov/servlets/purl/1438310.
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@article{osti_1438310,
title = {Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness},
author = {Ahmadi-Majlan, Kamyar and Chen, Tongjie and Lim, Zheng Hui and Conlin, Patrick and Hensley, Ricky and Chrysler, Matthew and Su, Dong and Chen, Hanghui and Kumah, Divine P. and Ngai, Joseph H.},
abstractNote = {Here, we present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.},
doi = {10.1063/1.5018069},
journal = {Applied Physics Letters},
number = 19,
volume = 112,
place = {United States},
year = {2018},
month = {5}
}
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https://doi.org/10.1063/1.5018069
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    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019

    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019

    Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
    journal, November 2018

    • Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui
    • Applied Physics Letters, Vol. 113, Issue 20
    • DOI: 10.1063/1.5046394

    Surface-induced thickness limit of conducting La-doped SrTiO 3 thin films
    journal, October 2019

    • Shin, Yeong Jae; Lau, Claudia; Lee, Sangjae
    • Applied Physics Letters, Vol. 115, Issue 16
    • DOI: 10.1063/1.5111771

    Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
    text, January 2018

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