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Title: Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states

Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, but the main technique currently available is spin-and angle-resolved photoemission spectroscopy. Here in this paper we reveal a close link between the spin texture and a new kind of magnetoresistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magnetoelectric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi 2Se 3 single layer, we can map both the in-plane and out-of-plane components of the spin texture (the latter arising from hexagonal warping). Theoretical calculations suggest that the bilinear magnetoelectric resistance originates from conversion of a non-equilibrium spin current into a charge current under application of the external magnetic field.
Authors:
 [1] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ; ORCiD logo [1]
  1. National Univ. of Singapore (Singapore). Dept. of Electrical and Computer Engineering, and NUSNNI
  2. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Publication Date:
Grant/Contract Number:
AC02-06CH11357; DMR-1406568
Type:
Accepted Manuscript
Journal Name:
Nature Physics
Additional Journal Information:
Journal Volume: 14; Journal Issue: 5; Journal ID: ISSN 1745-2473
Publisher:
Nature Publishing Group (NPG)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
OSTI Identifier:
1438261

He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Liu, Yang, Wang, Yi, Yu, Jiawei, Vignale, Giovanni, and Yang, Hyunsoo. Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states. United States: N. p., Web. doi:10.1038/s41567-017-0039-y.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Liu, Yang, Wang, Yi, Yu, Jiawei, Vignale, Giovanni, & Yang, Hyunsoo. Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states. United States. doi:10.1038/s41567-017-0039-y.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Liu, Yang, Wang, Yi, Yu, Jiawei, Vignale, Giovanni, and Yang, Hyunsoo. 2018. "Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states". United States. doi:10.1038/s41567-017-0039-y.
@article{osti_1438261,
title = {Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states},
author = {He, Pan and Zhang, Steven S. -L. and Zhu, Dapeng and Liu, Yang and Wang, Yi and Yu, Jiawei and Vignale, Giovanni and Yang, Hyunsoo},
abstractNote = {Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, but the main technique currently available is spin-and angle-resolved photoemission spectroscopy. Here in this paper we reveal a close link between the spin texture and a new kind of magnetoresistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magnetoelectric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and out-of-plane components of the spin texture (the latter arising from hexagonal warping). Theoretical calculations suggest that the bilinear magnetoelectric resistance originates from conversion of a non-equilibrium spin current into a charge current under application of the external magnetic field.},
doi = {10.1038/s41567-017-0039-y},
journal = {Nature Physics},
number = 5,
volume = 14,
place = {United States},
year = {2018},
month = {2}
}

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