skip to main content


This content will become publicly available on November 3, 2018

Title: How Does CIGS Performance Depend on Temperature at the Microscale?

Unveiling the correlation among electrical performance, elemental distribution, and defects at the microscale is crucial for the understanding and improvement of the overall solar cell performance. While this is true in general for solar cells with polycrystalline absorber layers, it is particularly critical for defect engineering of the complex quaternary CuIn xGa 1-xSe 2 (CIGS) material system. Studying these relationships under standard ambient conditions can provide important insights but does not provide input on the behavior of the cell under real operating conditions. In this contribution, we take a close look at the complex temperature dependence of defects and voltage in CIGS at the microscale. We have developed correlative X-raymicroscopymethods and adapted them for temperature-dependent measurements of the locally generated voltage and elemental compositions at the microscale. We have applied these techniques to industrial CIGS solar cells covering temperatures from room temperature up to 100 degrees C. Finally, we find underperforming areas spanning multiple grains that do not correlate with the elemental distribution of major absorber constituents. However, we demonstrate that low-performing areas perform better at higher temperatures relative to the high-performing areas.
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [1]
  1. Arizona State Univ., Tempe, AZ (United States). Defect Lab., School of Electrical, Computer and Energy Engineering
  2. MiaSole Hi-Tech Corp., Santa Clara, CA (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Grant/Contract Number:
AC02-06CH11357; EE0005948
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2156-3381
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Country of Publication:
United States
25 ENERGY STORAGE; X-ray beam induced voltage (XBIV); microscale; Beam damage; CuInxGa1-xSe2 (CIGS); solar cells
OSTI Identifier: