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Title: Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

We grew Cd 1-xMn xTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x10 10 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10 -3 cm 2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Publication Date:
Report Number(s):
BNL-205682-2018-JAAM
Journal ID: ISSN 0022-0248; PII: S0022024815007368
Grant/Contract Number:
SC0012704; 2012-DN-077-ARI065-03; NRC-27-10-514
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 437; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20); Dept. of Homeland Security (DHS) (United States); Nuclear Regulatory Commission (NRC) (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Characterization; Extended defects; Sub-grain boundary network; Bridgman; CdMnTe; Semiconducting II–VI materials
OSTI Identifier:
1438178
Alternate Identifier(s):
OSTI ID: 1251781