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Title: Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Abstract

We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.

Authors:
 [1];  [2];  [1];  [1];  [2];  [1];  [1];  [2];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; Dept. of Homeland Security (DHS) (United States); Nuclear Regulatory Commission (NRC) (United States)
OSTI Identifier:
1438178
Alternate Identifier(s):
OSTI ID: 1251781
Report Number(s):
BNL-205682-2018-JAAM
Journal ID: ISSN 0022-0248; PII: S0022024815007368
Grant/Contract Number:  
SC0012704; 2012-DN-077-ARI065-03; NRC-27-10-514
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 437; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Characterization; Extended defects; Sub-grain boundary network; Bridgman; CdMnTe; Semiconducting II–VI materials

Citation Formats

Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., and James, R. B. Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2015.12.017.
Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., & James, R. B. Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique. United States. https://doi.org/10.1016/j.jcrysgro.2015.12.017
Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., and James, R. B. Tue . "Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique". United States. https://doi.org/10.1016/j.jcrysgro.2015.12.017. https://www.osti.gov/servlets/purl/1438178.
@article{osti_1438178,
title = {Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique},
author = {Roy, U. N. and Okobiah, O. K. and Camarda, G. S. and Cui, Y. and Gul, R. and Hossain, A. and Yang, G. and Egarievwe, S. U. and James, R. B.},
abstractNote = {We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.},
doi = {10.1016/j.jcrysgro.2015.12.017},
journal = {Journal of Crystal Growth},
number = ,
volume = 437,
place = {United States},
year = {Tue Dec 29 00:00:00 EST 2015},
month = {Tue Dec 29 00:00:00 EST 2015}
}

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Cited by: 25 works
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Works referenced in this record:

Is the (Cd,Mn)Te crystal a prospective material for X-ray and ?-ray detectors?
journal, March 2005

  • Mycielski, A.; Burger, A.; Sowinska, M.
  • physica status solidi (c), Vol. 2, Issue 5
  • DOI: 10.1002/pssc.200460838

Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors
journal, April 2009


Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy
journal, June 2008


Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe
journal, January 1989


Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors
journal, August 2013

  • Kim, KiHyun; Jeng, Geunwoo; Kim, Pilsu
  • Journal of Applied Physics, Vol. 114, Issue 6
  • DOI: 10.1063/1.4817869

New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors
journal, August 2012

  • Kim, K. H.; Bolotnikov, A. E.; Camarda, G. S.
  • IEEE Transactions on Nuclear Science, Vol. 59, Issue 4
  • DOI: 10.1109/TNS.2012.2202917

Study of Te inclusions in CdMnTe crystals for nuclear detector applications
journal, July 2009


Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector
journal, March 2011


Material and detector properties of cadmium manganese telluride (Cd1−Mn Te) crystals grown by the modified floating-zone method
journal, June 2015

  • Hossain, A.; Gu, G. D.; Bolotnikov, A. E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 784
  • DOI: 10.1016/j.nima.2014.12.060

Modified Bridgman growth of CdTe crystals
journal, April 2008


Twins in CdMnTe single crystals grown by Bridgman method
journal, January 2010

  • Zhang, Jijun; Jie, Wanqi; Wang, Linjun
  • Crystal Research and Technology, Vol. 45, Issue 1
  • DOI: 10.1002/crat.200900623

Fundamental studies on Bridgman growth of CdTe
journal, January 1994


Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
journal, April 2010

  • Bolotnikov, Aleksey E.; Babalola, Stephen; Camarda, Giuseppe S.
  • IEEE Transactions on Nuclear Science, Vol. 57, Issue 2
  • DOI: 10.1109/TNS.2010.2042617

Crystal growth and characterization of CdTe grown by vertical gradient freeze
journal, January 2008

  • Su, Ching-Hua; Lehoczky, S. L.; Raghothamachar, B.
  • Materials Science and Engineering: B, Vol. 147, Issue 1
  • DOI: 10.1016/j.mseb.2007.11.005

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography
journal, March 2012


Compositional homogeneity and X-ray topographic analyses of CdTe Se1− grown by the vertical Bridgman technique
journal, February 2015


Evaluation of CdTexSe1−x crystals grown from a Te-rich solution
journal, March 2014


Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique
journal, May 2015


Works referencing / citing this record:

Determining the sub-surface damage of CdTe single crystals after lapping
journal, March 2018

  • Šik, O.; Škvarenina, L.; Caha, O.
  • Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 11
  • DOI: 10.1007/s10854-018-9002-7