Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique
Abstract
We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; Dept. of Homeland Security (DHS) (United States); Nuclear Regulatory Commission (NRC) (United States)
- OSTI Identifier:
- 1438178
- Alternate Identifier(s):
- OSTI ID: 1251781
- Report Number(s):
- BNL-205682-2018-JAAM
Journal ID: ISSN 0022-0248; PII: S0022024815007368
- Grant/Contract Number:
- SC0012704; 2012-DN-077-ARI065-03; NRC-27-10-514
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 437; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Characterization; Extended defects; Sub-grain boundary network; Bridgman; CdMnTe; Semiconducting II–VI materials
Citation Formats
Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., and James, R. B. Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique. United States: N. p., 2015.
Web. doi:10.1016/j.jcrysgro.2015.12.017.
Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., & James, R. B. Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique. United States. https://doi.org/10.1016/j.jcrysgro.2015.12.017
Roy, U. N., Okobiah, O. K., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Egarievwe, S. U., and James, R. B. Tue .
"Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique". United States. https://doi.org/10.1016/j.jcrysgro.2015.12.017. https://www.osti.gov/servlets/purl/1438178.
@article{osti_1438178,
title = {Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique},
author = {Roy, U. N. and Okobiah, O. K. and Camarda, G. S. and Cui, Y. and Gul, R. and Hossain, A. and Yang, G. and Egarievwe, S. U. and James, R. B.},
abstractNote = {We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.},
doi = {10.1016/j.jcrysgro.2015.12.017},
journal = {Journal of Crystal Growth},
number = ,
volume = 437,
place = {United States},
year = {Tue Dec 29 00:00:00 EST 2015},
month = {Tue Dec 29 00:00:00 EST 2015}
}
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Works referencing / citing this record:
Determining the sub-surface damage of CdTe single crystals after lapping
journal, March 2018
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