Conduction mechanisms, dynamics and stability in ReRAMs

Journal Article · 01 February 2018 · Microelectronic Engineering

DOI: https://doi.org/10.1016/j.mee.2017.11.003 · OSTI ID:1437759

Wang, Chen; Wu, Huaqiang; Gao, Bin; Zhang, Teng; Yang, Yuchao ; Qian, He

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• Sponsoring Organization: USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
• OSTI ID: 1437759
• Journal Information: Microelectronic Engineering, Journal Name: Microelectronic Engineering Journal Issue: C Vol. 187-188; ISSN 0167-9317
• Publisher: ElsevierCopyright Statement
• Country of Publication: Netherlands
• Language: English