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Title: Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
  2. Stanford Univ., CA (United States). Dept. of Applied Physics and Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Tokyo Inst. of Technology (Japan). Dept. of Chemical Science and Engineering
  3. Stanford Univ., CA (United States). Dept. of Applied Physics and Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Takenaka Scholarship Foundation (Japan)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; semiconductors; heterojunctions; epitaxy; thin films; chemical compounds; laser deposition
OSTI Identifier:
1437659

Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., and Hikita, Yasuyuki. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films. United States: N. p., Web. doi:10.1063/1.5025569.
Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., & Hikita, Yasuyuki. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films. United States. doi:10.1063/1.5025569.
Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., and Hikita, Yasuyuki. 2018. "Synthesis and electronic properties of Fe2TiO5 epitaxial thin films". United States. doi:10.1063/1.5025569. https://www.osti.gov/servlets/purl/1437659.
@article{osti_1437659,
title = {Synthesis and electronic properties of Fe2TiO5 epitaxial thin films},
author = {Osada, Motoki and Nishio, Kazunori and Hwang, Harold Y. and Hikita, Yasuyuki},
abstractNote = {Here, we investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.},
doi = {10.1063/1.5025569},
journal = {APL Materials},
number = 5,
volume = 6,
place = {United States},
year = {2018},
month = {5}
}

Works referenced in this record:

Small-polaron versus band conduction in some transition-metal oxides
journal, January 1970