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Title: Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Abstract

Here, we investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Authors:
 [1];  [2];  [3];  [4]
+ Show Author Affiliations
  1. Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
  2. Stanford Univ., CA (United States). Dept. of Applied Physics and Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Tokyo Inst. of Technology (Japan). Dept. of Chemical Science and Engineering
  3. Stanford Univ., CA (United States). Dept. of Applied Physics and Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Takenaka Scholarship Foundation (Japan)
OSTI Identifier:
1437659
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; semiconductors; heterojunctions; epitaxy; thin films; chemical compounds; laser deposition

Citation Formats

Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., and Hikita, Yasuyuki. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films. United States: N. p., 2018. Web. doi:10.1063/1.5025569.
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Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., & Hikita, Yasuyuki. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films. United States. https://doi.org/10.1063/1.5025569
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Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., and Hikita, Yasuyuki. Wed . "Synthesis and electronic properties of Fe2TiO5 epitaxial thin films". United States. https://doi.org/10.1063/1.5025569. https://www.osti.gov/servlets/purl/1437659.
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@article{osti_1437659,
title = {Synthesis and electronic properties of Fe2TiO5 epitaxial thin films},
author = {Osada, Motoki and Nishio, Kazunori and Hwang, Harold Y. and Hikita, Yasuyuki},
abstractNote = {Here, we investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.},
doi = {10.1063/1.5025569},
journal = {APL Materials},
number = 5,
volume = 6,
place = {United States},
year = {Wed May 02 00:00:00 EDT 2018},
month = {Wed May 02 00:00:00 EDT 2018}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5025569
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Citation Metrics:
Cited by: 13 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) XRD patterns of Fe2TiO5 films grown on LaAlO3 (001) at Tsub = 900°C and P$_{O_{2}}$ = 1 × 10-5 Torr (top) and T sub = 700°C and P$_{O_{2}}$ = 1 × 10-6 Torr (bottom). (b) Raman spectra of the corresponding Fe2TiO5 films in (a), Fe2TiO5 reference frommore » RRUFF project Pseudobrookite R050563, and the measured bare LaAlO3 (001) substrate. The marked peaks correspond to the vibrational modes of Fe2TiO5 (∗) and LaAlO3 (▼). RSM of Fe2TiO5 (100) film around the (c) Fe2TiO5 $6\bar{2}0$ and (d) Fe2TiO5 $70\bar{1}$ peaks.« less
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    Works referencing / citing this record:

    Structure and optical properties of sputter deposited pseudobrookite Fe 2 TiO 5 thin films
    journal, January 2019

    • Ngo, Hai Dang; Ngo, Thien Duc; Tamanai, Akemi
    • CrystEngComm, Vol. 21, Issue 1
    • DOI: 10.1039/c8ce01475b
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