Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells
Abstract
To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is the dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implantedmore »
- Authors:
-
- Aalto Univ., Espoo (Finland)
- Univ. of California, San Diego, La Jolla, CA (United States)
- Leibniz Univ. Hannover, Hannover (Germany)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1437281
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Journal of Photovoltaics
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2156-3381
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; gettering; Boron implantation; iron; silicon; simulation
Citation Formats
Laine, Hannu S., Vahanissi, Ville, Liu, Zhengjun, Magana, Ernesto, Krugener, Jan, Morishige, Ashley E., Salo, Kristian, Lai, Barry, Savin, Hele, and Fenning, David P. Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells. United States: N. p., 2017.
Web. doi:10.1109/jphotov.2017.2775159.
Laine, Hannu S., Vahanissi, Ville, Liu, Zhengjun, Magana, Ernesto, Krugener, Jan, Morishige, Ashley E., Salo, Kristian, Lai, Barry, Savin, Hele, & Fenning, David P. Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells. United States. https://doi.org/10.1109/jphotov.2017.2775159
Laine, Hannu S., Vahanissi, Ville, Liu, Zhengjun, Magana, Ernesto, Krugener, Jan, Morishige, Ashley E., Salo, Kristian, Lai, Barry, Savin, Hele, and Fenning, David P. Fri .
"Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells". United States. https://doi.org/10.1109/jphotov.2017.2775159. https://www.osti.gov/servlets/purl/1437281.
@article{osti_1437281,
title = {Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells},
author = {Laine, Hannu S. and Vahanissi, Ville and Liu, Zhengjun and Magana, Ernesto and Krugener, Jan and Morishige, Ashley E. and Salo, Kristian and Lai, Barry and Savin, Hele and Fenning, David P.},
abstractNote = {To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is the dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.},
doi = {10.1109/jphotov.2017.2775159},
journal = {IEEE Journal of Photovoltaics},
number = 1,
volume = 8,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}
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Figures / Tables:
Fig. 1: Gettering anneals and experimental parameters.
Figures / Tables found in this record: