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Title: Large, valley-exclusive Bloch-Siegert shift in monolayer WS 2

Authors:
ORCiD logo ; ; ; ; ORCiD logo ; ORCiD logo
Publication Date:
Grant/Contract Number:
293414
Type:
Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 355 Journal Issue: 6329; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1437070

Sie, Edbert J., Lui, Chun Hung, Lee, Yi-Hsien, Fu, Liang, Kong, Jing, and Gedik, Nuh. Large, valley-exclusive Bloch-Siegert shift in monolayer WS 2. United States: N. p., Web. doi:10.1126/science.aal2241.
Sie, Edbert J., Lui, Chun Hung, Lee, Yi-Hsien, Fu, Liang, Kong, Jing, & Gedik, Nuh. Large, valley-exclusive Bloch-Siegert shift in monolayer WS 2. United States. doi:10.1126/science.aal2241.
Sie, Edbert J., Lui, Chun Hung, Lee, Yi-Hsien, Fu, Liang, Kong, Jing, and Gedik, Nuh. 2017. "Large, valley-exclusive Bloch-Siegert shift in monolayer WS 2". United States. doi:10.1126/science.aal2241.
@article{osti_1437070,
title = {Large, valley-exclusive Bloch-Siegert shift in monolayer WS 2},
author = {Sie, Edbert J. and Lui, Chun Hung and Lee, Yi-Hsien and Fu, Liang and Kong, Jing and Gedik, Nuh},
abstractNote = {},
doi = {10.1126/science.aal2241},
journal = {Science},
number = 6329,
volume = 355,
place = {United States},
year = {2017},
month = {3}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012
  • Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
  • Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
  • DOI: 10.1002/adma.201104798