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This content will become publicly available on January 12, 2019

Title: The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1]
  1. Université Grenoble Alpes, F-38000 Grenoble France, CEA, LETI, MINATEC Campus, F-38054 Grenoble France
Publication Date:
Grant/Contract Number:
ENIAC-2012-2/1/2013; ENIAC-2012-2/2/2013
Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 255 Journal Issue: 5; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1437066