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Title: Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO 3 Films

Abstract

The growth of circular tip-induced domains has been studied in epitaxial BaTiO 3 (BTO) films as a function of writing voltage and time using piezoresponse force microscopy (PFM). While abundant for Pb(Zr,Ti)O 3 (PZT) films, such studies are rare for BTO. Strong relaxation of written domains is observed in the form of reduction of the PFM amplitude inside the area of written domains which occurs additionally to a decrease of the domain radius. The domain wall velocity observed for negative tip voltage is systematically smaller than that for positive tip voltage. Based on maps of the positive and negative switching fields, the effective driving field for both polarities has been estimated. The polarity-dependent effective field cannot account for the different velocities, indicating a polarity-dependent mobility of the domain walls.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [4]
  1. Martin Luther Univ. Halle-Wittenberg (Germany)
  2. Martin Luther Univ. Halle-Wittenberg (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Tsinghua Univ., Beijing (China); COMSATS Inst. of Information Technology, Islamabad (Pakistan)
  4. Martin Luther Univ. Halle-Wittenberg (Germany); Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1436925
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Volume: 255; Journal Issue: 7; Journal ID: ISSN 0370-1972
Publisher:
Wiley-Blackwell
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Roth, Robert, Guo, Er-Jia, Rafique, Mohsin, and Dorr, Kathrin. Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO3 Films. United States: N. p., 2018. Web. doi:10.1002/pssb.201700486.
Roth, Robert, Guo, Er-Jia, Rafique, Mohsin, & Dorr, Kathrin. Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO3 Films. United States. doi:10.1002/pssb.201700486.
Roth, Robert, Guo, Er-Jia, Rafique, Mohsin, and Dorr, Kathrin. Fri . "Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO3 Films". United States. doi:10.1002/pssb.201700486. https://www.osti.gov/servlets/purl/1436925.
@article{osti_1436925,
title = {Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO3 Films},
author = {Roth, Robert and Guo, Er-Jia and Rafique, Mohsin and Dorr, Kathrin},
abstractNote = {The growth of circular tip-induced domains has been studied in epitaxial BaTiO3 (BTO) films as a function of writing voltage and time using piezoresponse force microscopy (PFM). While abundant for Pb(Zr,Ti)O3 (PZT) films, such studies are rare for BTO. Strong relaxation of written domains is observed in the form of reduction of the PFM amplitude inside the area of written domains which occurs additionally to a decrease of the domain radius. The domain wall velocity observed for negative tip voltage is systematically smaller than that for positive tip voltage. Based on maps of the positive and negative switching fields, the effective driving field for both polarities has been estimated. The polarity-dependent effective field cannot account for the different velocities, indicating a polarity-dependent mobility of the domain walls.},
doi = {10.1002/pssb.201700486},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 7,
volume = 255,
place = {United States},
year = {2018},
month = {3}
}

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