skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Arizona State University, Tempe Arizona 85287 USA
  2. Energy Research Centre of the Netherlands, Petten 1755 LE the Netherlands, The University of New South Wales, Sydney 2052 NSW Australia
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1436893
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 255 Journal Issue: 8; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Bernardini, Simone, Naerland, Tine U., Coletti, Gianluca, and Bertoni, Mariana I. Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis. Germany: N. p., 2018. Web. doi:10.1002/pssb.201800082.
Bernardini, Simone, Naerland, Tine U., Coletti, Gianluca, & Bertoni, Mariana I. Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis. Germany. doi:10.1002/pssb.201800082.
Bernardini, Simone, Naerland, Tine U., Coletti, Gianluca, and Bertoni, Mariana I. Fri . "Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis". Germany. doi:10.1002/pssb.201800082.
@article{osti_1436893,
title = {Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis},
author = {Bernardini, Simone and Naerland, Tine U. and Coletti, Gianluca and Bertoni, Mariana I.},
abstractNote = {},
doi = {10.1002/pssb.201800082},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 8,
volume = 255,
place = {Germany},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/pssb.201800082

Save / Share:

Works referenced in this record:

Recombination activity of interstitial chromium and chromium-boron pairs in silicon
journal, December 2007

  • Schmidt, Jan; Krain, Rafael; Bothe, Karsten
  • Journal of Applied Physics, Vol. 102, Issue 12
  • DOI: 10.1063/1.2822452

Lifetime Spectroscopy Investigation of Light-Induced Degradation in p-type Multicrystalline Silicon PERC
journal, November 2016

  • Morishige, Ashley E.; Jensen, Mallory A.; Needleman, David Berney
  • IEEE Journal of Photovoltaics, Vol. 6, Issue 6
  • DOI: 10.1109/JPHOTOV.2016.2606699

Application of the Newton–Raphson Method to Lifetime Spectroscopy for Extraction of Defect Parameters
journal, July 2017


Temperature dependent carrier lifetime studies of Mo in crystalline silicon
journal, March 2010

  • Paudyal, Bijaya B.; McIntosh, Keith R.; Macdonald, Daniel H.
  • Journal of Applied Physics, Vol. 107, Issue 5
  • DOI: 10.1063/1.3309833

Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
journal, November 2004

  • Macdonald, Daniel; Geerligs, L. J.
  • Applied Physics Letters, Vol. 85, Issue 18
  • DOI: 10.1063/1.1812833

Statistics of the Recombinations of Holes and Electrons
journal, September 1952


Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon
journal, December 2006

  • Dubois, S.; Palais, O.; Ribeyron, P. J.
  • Applied Physics Letters, Vol. 89, Issue 23
  • DOI: 10.1063/1.2402261

Unraveling bulk defects in high-quality c-Si material via TIDLS: Unraveling bulk defects in high-quality c-Si material
journal, December 2016

  • Bernardini, Simone; Naerland, Tine U.; Blum, Adrienne L.
  • Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 3
  • DOI: 10.1002/pip.2847

The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C
journal, November 2008

  • Paudyal, B. B.; McIntosh, K. R.; Macdonald, D. H.
  • Progress in Photovoltaics: Research and Applications, Vol. 16, Issue 7
  • DOI: 10.1002/pip.839

Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon
journal, June 2009

  • Paudyal, B. B.; McIntosh, K. R.; Macdonald, D. H.
  • Journal of Applied Physics, Vol. 105, Issue 12
  • DOI: 10.1063/1.3139286

Is It Possible to Unambiguously Assess the Presence of Two Defects By Temperature- and Injection-Dependent Lifetime Spectroscopy?
journal, March 2018


Distribution and impact of chromium in compensated solar grade silicon
journal, August 2012


Determining the defect parameters of the deep aluminum-related defect center in silicon
journal, September 2007

  • Rosenits, Philipp; Roth, Thomas; Glunz, Stefan W.
  • Applied Physics Letters, Vol. 91, Issue 12
  • DOI: 10.1063/1.2789378

Properties of platinum‐associated deep levels in silicon
journal, February 1987

  • Kwon, Y. K.; Ishikawa, T.; Kuwano, H.
  • Journal of Applied Physics, Vol. 61, Issue 3
  • DOI: 10.1063/1.338197

Complete electrical characterization of recombination properties of titanium in silicon
journal, August 1984

  • Wang, Alex C.; Sah, C. T.
  • Journal of Applied Physics, Vol. 56, Issue 4
  • DOI: 10.1063/1.334095

Electronic structure of copper, silver, and gold impurities in silicon
journal, July 1985


Electronic properties and dopant pairing behavior of manganese in boron-doped silicon
journal, November 2007

  • Roth, T.; Rosenits, P.; Diez, S.
  • Journal of Applied Physics, Vol. 102, Issue 10
  • DOI: 10.1063/1.2812698

Improved quantitative description of Auger recombination in crystalline silicon
journal, October 2012


Electron-Hole Recombination in Germanium
journal, July 1952


Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy
journal, February 2007

  • Diez, S.; Rein, S.; Roth, T.
  • Journal of Applied Physics, Vol. 101, Issue 3
  • DOI: 10.1063/1.2433743

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
journal, February 2002

  • Rein, S.; Rehrl, T.; Warta, W.
  • Journal of Applied Physics, Vol. 91, Issue 4
  • DOI: 10.1063/1.1428095