Random anion distribution in MSxSe2-x(M = Mo, W) crystals and nanosheets
Abstract
The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2–x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2–x solid solutions.
- Authors:
-
- Pennsylvania State Univ., University Park, PA (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Org.:
- US Army Research Office (ARO); National Science Foundation (NSF); Japan Society for the Promotion of Science (JSPS); Murata Science Foundation
- OSTI Identifier:
- 1436786
- Grant/Contract Number:
- W911NF-11-1-0362; DMR-1420620; 16H06793
- Resource Type:
- Accepted Manuscript
- Journal Name:
- RSC Advances
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 18; Journal ID: ISSN 2046-2069
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Nguyen, Minh An T., Gupta, Arnab Sen, Shevrin, Jacob, Akamatsu, Hirofumi, Xu, Pengtao, Lin, Zhong, Wang, Ke, Zhu, Jun, Gopalan, Venkatraman, Terrones, Mauricio, and Mallouk, Thomas E. Random anion distribution in MSxSe2-x(M = Mo, W) crystals and nanosheets. United States: N. p., 2018.
Web. doi:10.1039/C8RA01497C.
Nguyen, Minh An T., Gupta, Arnab Sen, Shevrin, Jacob, Akamatsu, Hirofumi, Xu, Pengtao, Lin, Zhong, Wang, Ke, Zhu, Jun, Gopalan, Venkatraman, Terrones, Mauricio, & Mallouk, Thomas E. Random anion distribution in MSxSe2-x(M = Mo, W) crystals and nanosheets. United States. https://doi.org/10.1039/C8RA01497C
Nguyen, Minh An T., Gupta, Arnab Sen, Shevrin, Jacob, Akamatsu, Hirofumi, Xu, Pengtao, Lin, Zhong, Wang, Ke, Zhu, Jun, Gopalan, Venkatraman, Terrones, Mauricio, and Mallouk, Thomas E. Fri .
"Random anion distribution in MSxSe2-x(M = Mo, W) crystals and nanosheets". United States. https://doi.org/10.1039/C8RA01497C. https://www.osti.gov/servlets/purl/1436786.
@article{osti_1436786,
title = {Random anion distribution in MSxSe2-x(M = Mo, W) crystals and nanosheets},
author = {Nguyen, Minh An T. and Gupta, Arnab Sen and Shevrin, Jacob and Akamatsu, Hirofumi and Xu, Pengtao and Lin, Zhong and Wang, Ke and Zhu, Jun and Gopalan, Venkatraman and Terrones, Mauricio and Mallouk, Thomas E.},
abstractNote = {The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2–x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2–x solid solutions.},
doi = {10.1039/C8RA01497C},
journal = {RSC Advances},
number = 18,
volume = 8,
place = {United States},
year = {Fri Mar 09 00:00:00 EST 2018},
month = {Fri Mar 09 00:00:00 EST 2018}
}
Web of Science
Works referenced in this record:
A General Recursion Method for Calculating Diffracted Intensities from Crystals Containing Planar Faults
journal, June 1991
- Treacy, M. M. J.; Newsam, J. M.; Deem, M. W.
- Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 433, Issue 1889
Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
journal, November 2012
- Komsa, Hannu-Pekka; Krasheninnikov, Arkady V.
- The Journal of Physical Chemistry Letters, Vol. 3, Issue 23, p. 3652-3656
Stacking faults in the structure of nickel hydroxide: a rationale of its high electrochemical activity
journal, January 1997
- Delmas, Claude; Tessier, Cecile
- Journal of Materials Chemistry, Vol. 7, Issue 8
Phonons in single-layer and few-layer MoS and WS
journal, October 2011
- Molina-Sánchez, A.; Wirtz, L.
- Physical Review B, Vol. 84, Issue 15
X-ray studies of deformed metals
journal, January 1959
- Warren, B. E.
- Progress in Metal Physics, Vol. 8
Ultralow Thermal Conductivity in Disordered, Layered WSe2 Crystals
journal, January 2007
- Chiritescu, C.; Cahill, D. G.; Nguyen, N.
- Science, Vol. 315, Issue 5810, p. 351-353
Growth of MoS 2(1– x ) Se 2 x ( x = 0.41–1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition
journal, June 2015
- Feng, Qingliang; Mao, Nannan; Wu, Juanxia
- ACS Nano, Vol. 9, Issue 7
Crystal structures of tungsten disulfide and diselenide
journal, October 1987
- Schutte, W. J.; De Boer, J. L.; Jellinek, F.
- Journal of Solid State Chemistry, Vol. 70, Issue 2
Stoichiometry, structure, and physical properties of niobium disulfide
journal, January 1980
- Fisher, Wayne G.; Sienko, M. J.
- Inorganic Chemistry, Vol. 19, Issue 1
Direct observation of the work function evolution of graphene-two-dimensional metal contacts
journal, January 2014
- Yang, Songbo; Zhou, Peng; Chen, Lin
- J. Mater. Chem. C, Vol. 2, Issue 38
Hydrodesulfurization of dibenzothiophene over exfoliated MoS2 catalyst
journal, September 2006
- Tye, Ching Thian; Smith, Kevin J.
- Catalysis Today, Vol. 116, Issue 4
Three-Dimensional Visualization in Powder Diffraction
journal, December 2007
- Izumi, Fujio; Momma, Koichi
- Solid State Phenomena, Vol. 130
The hydrogenation and direct desulfurization reaction pathway in thiophene hydrodesulfurization over MoS2 catalysts at realistic conditions: A density functional study
journal, June 2007
- Moses, P.; Hinnemann, B.; Topsoe, H.
- Journal of Catalysis, Vol. 248, Issue 2
Observation of Switchable Photoresponse of a Monolayer WSe 2 –MoS 2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging
journal, May 2016
- Son, Youngwoo; Li, Ming-Yang; Cheng, Chia-Chin
- Nano Letters, Vol. 16, Issue 6
Growth of Large-Area 2D MoS 2(1- x ) Se 2 x Semiconductor Alloys
journal, February 2014
- Feng, Qingliang; Zhu, Yiming; Hong, Jinhua
- Advanced Materials, Vol. 26, Issue 17
Structural Models and Atomic Distribution of Bimetallic Nanoparticles as Investigated by X-ray Absorption Spectroscopy
journal, August 2005
- Hwang, Bing-Joe; Sarma, Loka Subramanyam; Chen, Jiun-Ming
- Journal of the American Chemical Society, Vol. 127, Issue 31
Van der Waals heterostructures
journal, July 2013
- Geim, A. K.; Grigorieva, I. V.
- Nature, Vol. 499, Issue 7459, p. 419-425
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
journal, September 2014
- Gong, Yongji; Lin, Junhao; Wang, Xingli
- Nature Materials, Vol. 13, Issue 12, p. 1135-1142
Work function engineering of single layer graphene by irradiation-induced defects
journal, October 2013
- Kim, Jong-Hun; Hwang, Jin Heui; Suh, Joonki
- Applied Physics Letters, Vol. 103, Issue 17
Tungsten Ditelluride: a layered semimetal
journal, June 2015
- Lee, Chia-Hui; Silva, Eduardo Cruz; Calderin, Lazaro
- Scientific Reports, Vol. 5, Issue 1
Mobility of Charge Carriers in Semiconducting Layer Structures
journal, November 1967
- Fivaz, R.; Mooser, E.
- Physical Review, Vol. 163, Issue 3
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
journal, April 2013
- Kang, Jun; Tongay, Sefaattin; Li, Jingbo
- Journal of Applied Physics, Vol. 113, Issue 14, Article No. 143703
Experimental Review of Graphene
journal, January 2012
- Cooper, Daniel R.; D’Anjou, Benjamin; Ghattamaneni, Nageswara
- ISRN Condensed Matter Physics, Vol. 2012
Novel high pressure structures and superconductivity of niobium disulfide
journal, October 2014
- Liu, Zhong-Li; Cai, Ling-Cang; Zhang, Xiu-Lu
- Journal of Alloys and Compounds, Vol. 610
Electrical and magnetic properties of some first row transition metal intercalates of niobium disulphide
journal, May 1977
- Friend, R. H.; Beal, A. R.; Yoffe, A. D.
- The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics, Vol. 35, Issue 5
Electrochemical characterization of p-type semiconducting tungsten disulfide photocathodes: efficient photoreduction processes at semiconductor/liquid electrolyte interfaces
journal, April 1983
- Baglio, Joseph A.; Calabrese, Gary S.; Harrison, D. Jed
- Journal of the American Chemical Society, Vol. 105, Issue 8
Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons
journal, August 1967
- Clementi, E.; Raimondi, D. L.; Reinhardt, W. P.
- The Journal of Chemical Physics, Vol. 47, Issue 4
Layered semiconductor tungsten disulfide: photoactive material in bulk heterojunction solar cells
journal, May 2013
- Shanmugam, Mariyappan; Durcan, Chris A.; Jacobs-Gedrim, Robin
- Nano Energy, Vol. 2, Issue 3
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
journal, July 2015
- Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei
- Nature Communications, Vol. 6, Issue 1
Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties
journal, February 2014
- Li, Honglai; Duan, Xidong; Wu, Xueping
- Journal of the American Chemical Society, Vol. 136, Issue 10, p. 3756-3759
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012
- Britnell, L.; Gorbachev, R. V.; Jalil, R.
- Science, Vol. 335, Issue 6071
The role of cobalt and molybdenum sulphides in hydrodesulphurisation catalysts: A review
journal, May 1974
- Grange, P.; Delmon, B.
- Journal of the Less Common Metals, Vol. 36, Issue 1-2
Boron nitride substrates for high-quality graphene electronics
journal, August 2010
- Dean, C. R.; Young, A. F.; Meric, I.
- Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
Surface Analysis and Photoelectrochemical Studies of Mixed Polycrystals of p-WSe[sub 2]∕WS[sub 2]
journal, January 1995
- Santiago-Ortiz, Yolanda
- Journal of The Electrochemical Society, Vol. 142, Issue 8
Studies on layer disorder, microstructural parameters and other properties of tungsten-substitued molybdenum disulfide, Mo1−xWxS2 (0≤x≤1)
journal, October 1997
- Srivastava, S. K.; Mandal, T. K.; Samantaray, B. K.
- Synthetic Metals, Vol. 90, Issue 2
Synthesis of WS 2 x Se 2–2 x Alloy Nanosheets with Composition-Tunable Electronic Properties
journal, December 2015
- Duan, Xidong; Wang, Chen; Fan, Zheng
- Nano Letters, Vol. 16, Issue 1
Visualization and quantification of transition metal atomic mixing in Mo1−xWxS2 single layers
journal, January 2013
- Dumcenco, Dumitru O.; Kobayashi, Haruka; Liu, Zheng
- Nature Communications, Vol. 4, Article No. 1351
Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS 2
journal, April 2013
- Sahoo, Satyaprakash; Gaur, Anand P. S.; Ahmadi, Majid
- The Journal of Physical Chemistry C, Vol. 117, Issue 17
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
journal, July 2013
- Gong, Cheng; Zhang, Hengji; Wang, Weihua
- Applied Physics Letters, Vol. 103, Issue 5
Order-disorder phase transitions in the two-dimensional semiconducting transition metal dichalcogenide alloys Mo1−xWxX2 (X = S, Se and Te)
journal, October 2014
- Gan, Li-Yong; Zhang, Qingyun; Zhao, Yu-Jun
- Scientific Reports, Vol. 4, Issue 1
Spontaneous Formation of Atomically Thin Stripes in Transition Metal Dichalcogenide Monolayers
journal, October 2016
- Azizi, Amin; Wang, Yuanxi; Lin, Zhong
- Nano Letters, Vol. 16, Issue 11
Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
journal, April 2013
- Chen, Yanfeng; Xi, Jinyang; Dumcenco, Dumitru O.
- ACS Nano, Vol. 7, Issue 5, p. 4610-4616
Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
journal, December 2013
- Gong, Yongji; Liu, Zheng; Lupini, Andrew R.
- Nano Letters, Vol. 14, Issue 2
Preparation of alternating MoS 2 and WS 2 single layers to form a new MoWS 4 structure
journal, February 1990
- Miremadi, Bijan K.; Morrison, S. Roy
- Journal of Applied Physics, Vol. 67, Issue 3
Experimental review of graphene
preprint, January 2011
- Cooper, Daniel R.; D'Anjou, Benjamin; Ghattamaneni, Nageswara
- arXiv
Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2
text, January 2013
- Sahoo, Satyaprakash; Gaur, Anand P. S.; Ahmadi, Majid
- arXiv
Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
text, January 2013
- Gong, Cheng; Zhang, Hengji; Wang, Weihua
- arXiv