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This content will become publicly available on October 28, 2018

Title: Modeling emission lag after photoexcitation

A theoretical model of delayed emission following photoexcitation from metals and semiconductors is given. Its numerical implementation is designed for beam optics codes used to model photocathodes in rf photoinjectors. The model extends the Moments approach for predicting photocurrent and mean transverse energy as moments of an emitted electron distribution by incorporating time of flight and scattering events that result in emission delay on a sub-picosecond level. The model accounts for a dynamic surface extraction field and changes in the energy distribution and time of emission as a consequence of the laser penetration depth and multiple scattering events during transport. Usage in the Particle-in-Cell code MICHELLE to predict the bunch shape and duration with or without laser jitter is given. The consequences of delayed emission effects for ultra-short pulses are discussed.
Authors:
ORCiD logo [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [1]
  1. Naval Research Lab. (NRL), Washington, DC (United States)
  2. Leidos, Billerica, MA (United States)
  3. Gnosys Systems, Inc., Providence, RI (United States)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Grant/Contract Number:
SC0013246
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Gnosys Systems, Inc., Providence, RI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1436566
Alternate Identifier(s):
OSTI ID: 1402113