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Title: Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

Abstract

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Stanford Univ., Stanford, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); High Energy Accelerator Research Organization (KEK), Ibaraki (Japan)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Bristol, Bristol (United Kingdom)
  5. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1436470
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kim, Brian S. Y., Minohara, Makoto, Hikita, Yasuyuki, Bell, Christopher, and Hwang, Harold Y. Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors. United States: N. p., 2018. Web. doi:10.1063/1.5024418.
Kim, Brian S. Y., Minohara, Makoto, Hikita, Yasuyuki, Bell, Christopher, & Hwang, Harold Y. Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors. United States. doi:10.1063/1.5024418.
Kim, Brian S. Y., Minohara, Makoto, Hikita, Yasuyuki, Bell, Christopher, and Hwang, Harold Y. Mon . "Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors". United States. doi:10.1063/1.5024418. https://www.osti.gov/servlets/purl/1436470.
@article{osti_1436470,
title = {Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors},
author = {Kim, Brian S. Y. and Minohara, Makoto and Hikita, Yasuyuki and Bell, Christopher and Hwang, Harold Y.},
abstractNote = {Here, anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μFE of 3.14 cm2 (V s)–1 approaching 98% of the corresponding Hall mobility μHall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.},
doi = {10.1063/1.5024418},
journal = {Applied Physics Letters},
number = 13,
volume = 112,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 1 work
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Figures / Tables:

FIG. 1. FIG. 1. : Room-temperature MESFET device: (a) process flow and (b) schematics. 1 u.c. deposition of the La2O3 target flips the surface termination of the LaAlO3 (001) substrate from AlO2 to LaO, which changes the anatase TiO2/LaAlO3 (001) interface boundary conditions. Subsequently deposited ~24nm anatase TiO2 is used as themore » active channel of the device, with dimensions of 1.2mm x 0.29mm, and a Pt/anatase TiO2 Schottky gate is used. (c) AFM surface morphology of the anatase TiO2 (scan area, 5 $μ$m x 5 $μ$m). (d) (4 x 1) surface-reconstructed RHEED patterns of the (001)-oriented anatase TiO2. Arrows show the additional streaks arising from surface reconstruction.« less

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    Works referencing / citing this record:

    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.