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This content will become publicly available on March 26, 2019

Title: Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Stanford Univ., Stanford, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); High Energy Accelerator Research Organization (KEK), Ibaraki (Japan)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Bristol, Bristol (United Kingdom)
  5. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1436470