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Title: Selective excitation of window and buffer layers in chalcopyrite devices and modules

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-68654
Journal ID: ISSN 0040-6090
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 655; Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; copper indium gallium; diselenide; CIGS; buffer layers; CdS; zinc oxysulfide; selective excitation; metastability; solar cells
OSTI Identifier:
1436404

Glynn, Stephen, Repins, Ingrid L., Burst, James M., Beall, Carolyn L., Bowers, Karen A., and Mansfield, Lorelle M.. Selective excitation of window and buffer layers in chalcopyrite devices and modules. United States: N. p., Web. doi:10.1016/j.tsf.2018.01.040.
Glynn, Stephen, Repins, Ingrid L., Burst, James M., Beall, Carolyn L., Bowers, Karen A., & Mansfield, Lorelle M.. Selective excitation of window and buffer layers in chalcopyrite devices and modules. United States. doi:10.1016/j.tsf.2018.01.040.
Glynn, Stephen, Repins, Ingrid L., Burst, James M., Beall, Carolyn L., Bowers, Karen A., and Mansfield, Lorelle M.. 2018. "Selective excitation of window and buffer layers in chalcopyrite devices and modules". United States. doi:10.1016/j.tsf.2018.01.040.
@article{osti_1436404,
title = {Selective excitation of window and buffer layers in chalcopyrite devices and modules},
author = {Glynn, Stephen and Repins, Ingrid L. and Burst, James M. and Beall, Carolyn L. and Bowers, Karen A. and Mansfield, Lorelle M.},
abstractNote = {Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.},
doi = {10.1016/j.tsf.2018.01.040},
journal = {Thin Solid Films},
number = C,
volume = 655,
place = {United States},
year = {2018},
month = {2}
}