A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction
Abstract
Abstract All‐inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high‐performance phototransistor based on a layered heterojunction composed of CsPbI 3 QDs and a narrow‐bandgap conjugated polymer DPP‐DTT is reported, which shows a high responsivity of 110 A W −1 , a specific detectivity of 2.9 × 10 13 Jones and a light to dark current ratio up to 6 × 10 3 . The heterojunction phototransistor exhibits unipolar p‐type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range from ultraviolet to near infrared. The high sensitivity of the device is attributed to the layered heterojunction and the gate bias modulation property. The work overcomes the existing limitations in sensitivity of IPQD photodetectors due to the poor charge transport between QDs. The convenient solution‐processed fabrication and excellent device performance especially suggest the IPQD/narrow‐bandgap conjugate polymer heterojunction as a promising structure for potential applications of ultrasensitive broadband photodetectors compatible with a wide variety of substrates.
- Authors:
-
[1];
[2];
[1]
- Department of Electrical Engineering University of Washington Seattle WA 98195 USA
- Department of Chemical Engineering University of Washington Seattle WA 98195 USA
- Department of Electrical Engineering University of Washington Seattle WA 98195 USA, Department of Applied Materials and Optoelectronic Engineering National Chi Nan University NanTou 54561 Taiwan
- Department of Physics University of Washington Seattle WA 98195 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1436195
- Grant/Contract Number:
- DE‐SC0010282
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Optical Materials
- Additional Journal Information:
- Journal Name: Advanced Optical Materials Journal Volume: 6 Journal Issue: 14; Journal ID: ISSN 2195-1071
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., and Lin, Lih Y. A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction. Germany: N. p., 2018.
Web. doi:10.1002/adom.201800324.
Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., & Lin, Lih Y. A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction. Germany. https://doi.org/10.1002/adom.201800324
Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., and Lin, Lih Y. Sun .
"A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction". Germany. https://doi.org/10.1002/adom.201800324.
@article{osti_1436195,
title = {A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction},
author = {Zou, Chen and Xi, Yuyin and Huang, Chun‐Ying and Keeler, Ethan G. and Feng, Tianyu and Zhu, Shihao and Pozzo, Lilo D. and Lin, Lih Y.},
abstractNote = {Abstract All‐inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high‐performance phototransistor based on a layered heterojunction composed of CsPbI 3 QDs and a narrow‐bandgap conjugated polymer DPP‐DTT is reported, which shows a high responsivity of 110 A W −1 , a specific detectivity of 2.9 × 10 13 Jones and a light to dark current ratio up to 6 × 10 3 . The heterojunction phototransistor exhibits unipolar p‐type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range from ultraviolet to near infrared. The high sensitivity of the device is attributed to the layered heterojunction and the gate bias modulation property. The work overcomes the existing limitations in sensitivity of IPQD photodetectors due to the poor charge transport between QDs. The convenient solution‐processed fabrication and excellent device performance especially suggest the IPQD/narrow‐bandgap conjugate polymer heterojunction as a promising structure for potential applications of ultrasensitive broadband photodetectors compatible with a wide variety of substrates.},
doi = {10.1002/adom.201800324},
journal = {Advanced Optical Materials},
number = 14,
volume = 6,
place = {Germany},
year = {Sun May 06 00:00:00 EDT 2018},
month = {Sun May 06 00:00:00 EDT 2018}
}
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