skip to main content

DOE PAGESDOE PAGES

Title: Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [2] ; ORCiD logo [2] ;  [1] ;  [3] ;  [2] ;  [3]
  1. Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA
  2. Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
  3. Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA
Publication Date:
Grant/Contract Number:
SC0013178
Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 6 Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1436017

Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., and Wang, Yaguo. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides. United States: N. p., Web. doi:10.1063/1.5022339.
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., & Wang, Yaguo. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides. United States. doi:10.1063/1.5022339.
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., and Wang, Yaguo. 2018. "Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides". United States. doi:10.1063/1.5022339.
@article{osti_1436017,
title = {Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides},
author = {Chen, Ke and Roy, Anupam and Rai, Amritesh and Movva, Hema C. P. and Meng, Xianghai and He, Feng and Banerjee, Sanjay K. and Wang, Yaguo},
abstractNote = {},
doi = {10.1063/1.5022339},
journal = {APL Materials},
number = 5,
volume = 6,
place = {United States},
year = {2018},
month = {5}
}