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This content will become publicly available on May 3, 2019

Title: Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

Authors:
 [1] ;  [1] ;  [1]
  1. National Renewable Energy Laboratory, 15013 Denver West Blvd., Golden, Colorado 80401, USA
Publication Date:
Grant/Contract Number:
AC36-08GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 17; Related Information: CHORUS Timestamp: 2018-05-03 13:41:12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1435875