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Title: Ultrahigh Power Factor in Thermoelectric System Nb 0.95M 0.05FeSb (M = Hf, Zr, and Ti)

Abstract

Conversion efficiency and output power are crucial parameters for thermoelectric power generation that highly rely on figure of merit ZT and power factor (PF), respectively. Therefore, the synergistic optimization of electrical and thermal properties is imperative instead of optimizing just ZT by thermal conductivity reduction or just PF by electron transport enhancement. Here, it is demonstrated that Nb 0.95Hf 0.05FeSb has not only ultrahigh PF over ≈100 µW cm -1 K -2 at room temperature but also the highest ZT in a material system Nb0.95M0.05FeSb (M = Hf, Zr, Ti). It is found that Hf dopant is capable to simultaneously supply carriers for mobility optimization and introduce atomic disorder for reducing lattice thermal conductivity. As a result, Nb 0.95Hf 0.05FeSb distinguishes itself from other outstanding NbFeSb-based materials in both the PF and ZT. Additionally, a large output power density of ≈21.6 W cm -2 is achieved based on a single-leg device under a temperature difference of ≈560 K, showing the realistic prospect of the ultrahigh PF for power generation.

Authors:
 [1];  [2];  [2];  [2];  [3];  [2];  [2];  [4];  [3];  [5]; ORCiD logo [2]
  1. Univ. of Electronic Science and Technology of China Chengdu (China). Inst. of Fundamental and Frontier Sciences; Univ. of Houston, Houston, TX (United States). Dept. of Physics and Texas Center for Superconductivity
  2. Univ. of Houston, Houston, TX (United States). Dept. of Physics and Texas Center for Superconductivity
  3. Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany). Inst. for Metallic Materials
  4. Univ. of Electronic Science and Technology of China Chengdu (China). State Key Lab. of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-state Electronics
  5. Univ. of Electronic Science and Technology of China Chengdu (China). Inst. of Fundamental and Frontier Sciences
Publication Date:
Research Org.:
Univ of Houston System, 4800 Calhoun, Houston Texas 77004, United States
Sponsoring Org.:
USDOE
OSTI Identifier:
1435846
Alternate Identifier(s):
OSTI ID: 1435847; OSTI ID: 1498959
Grant/Contract Number:  
SC0010831
Resource Type:
Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Volume: 5; Journal Issue: 7; Journal ID: ISSN 2198-3844
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 24 POWER TRANSMISSION AND DISTRIBUTION; half-Heusler compounds; power generation; simultaneous optimization; thermoelectric materials

Citation Formats

Ren, Wuyang, Zhu, Hangtian, Zhu, Qing, Saparamadu, Udara, He, Ran, Liu, Zihang, Mao, Jun, Wang, Chao, Nielsch, Kornelius, Wang, Zhiming, and Ren, Zhifeng. Ultrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti). United States: N. p., 2018. Web. doi:10.1002/advs.201800278.
Ren, Wuyang, Zhu, Hangtian, Zhu, Qing, Saparamadu, Udara, He, Ran, Liu, Zihang, Mao, Jun, Wang, Chao, Nielsch, Kornelius, Wang, Zhiming, & Ren, Zhifeng. Ultrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti). United States. doi:10.1002/advs.201800278.
Ren, Wuyang, Zhu, Hangtian, Zhu, Qing, Saparamadu, Udara, He, Ran, Liu, Zihang, Mao, Jun, Wang, Chao, Nielsch, Kornelius, Wang, Zhiming, and Ren, Zhifeng. Wed . "Ultrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti)". United States. doi:10.1002/advs.201800278.
@article{osti_1435846,
title = {Ultrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti)},
author = {Ren, Wuyang and Zhu, Hangtian and Zhu, Qing and Saparamadu, Udara and He, Ran and Liu, Zihang and Mao, Jun and Wang, Chao and Nielsch, Kornelius and Wang, Zhiming and Ren, Zhifeng},
abstractNote = {Conversion efficiency and output power are crucial parameters for thermoelectric power generation that highly rely on figure of merit ZT and power factor (PF), respectively. Therefore, the synergistic optimization of electrical and thermal properties is imperative instead of optimizing just ZT by thermal conductivity reduction or just PF by electron transport enhancement. Here, it is demonstrated that Nb0.95Hf0.05FeSb has not only ultrahigh PF over ≈100 µW cm-1 K-2 at room temperature but also the highest ZT in a material system Nb0.95M0.05FeSb (M = Hf, Zr, Ti). It is found that Hf dopant is capable to simultaneously supply carriers for mobility optimization and introduce atomic disorder for reducing lattice thermal conductivity. As a result, Nb0.95Hf0.05FeSb distinguishes itself from other outstanding NbFeSb-based materials in both the PF and ZT. Additionally, a large output power density of ≈21.6 W cm-2 is achieved based on a single-leg device under a temperature difference of ≈560 K, showing the realistic prospect of the ultrahigh PF for power generation.},
doi = {10.1002/advs.201800278},
journal = {Advanced Science},
number = 7,
volume = 5,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/advs.201800278

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Cited by: 4 works
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