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Title: Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3-δ epitaxial thin films

Authors:
 [1];  [2];  [3];  [4];  [5];  [2];  [6]; ORCiD logo [7];  [8];  [3];  [7];  [9]
  1. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China, Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China
  3. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  4. Department of Chemical and Biochemical Engineering, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China
  5. Laboratory of Dielectric Functional Materials, School of Physics and Material Science, Anhui University, Hefei 230039, China
  6. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  7. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  8. Department of Electrical and Computer Engineering, Texas A&,M University, College Station, Texas 77843-3128, USA, School of Materials Engineering, Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  9. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1435670
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Li, Weiwei, Gu, Junxing, He, Qian, Zhang, Kelvin H. L., Wang, Chunchang, Jin, Kuijuan, Wang, Yongqiang, Acosta, Matias, Wang, Haiyan, Borisevich, Albina Y., MacManus-Driscoll, Judith L., and Yang, Hao. Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3-δ epitaxial thin films. United States: N. p., 2018. Web. doi:10.1063/1.5025607.
Li, Weiwei, Gu, Junxing, He, Qian, Zhang, Kelvin H. L., Wang, Chunchang, Jin, Kuijuan, Wang, Yongqiang, Acosta, Matias, Wang, Haiyan, Borisevich, Albina Y., MacManus-Driscoll, Judith L., & Yang, Hao. Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3-δ epitaxial thin films. United States. doi:10.1063/1.5025607.
Li, Weiwei, Gu, Junxing, He, Qian, Zhang, Kelvin H. L., Wang, Chunchang, Jin, Kuijuan, Wang, Yongqiang, Acosta, Matias, Wang, Haiyan, Borisevich, Albina Y., MacManus-Driscoll, Judith L., and Yang, Hao. Mon . "Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3-δ epitaxial thin films". United States. doi:10.1063/1.5025607.
@article{osti_1435670,
title = {Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3-δ epitaxial thin films},
author = {Li, Weiwei and Gu, Junxing and He, Qian and Zhang, Kelvin H. L. and Wang, Chunchang and Jin, Kuijuan and Wang, Yongqiang and Acosta, Matias and Wang, Haiyan and Borisevich, Albina Y. and MacManus-Driscoll, Judith L. and Yang, Hao},
abstractNote = {},
doi = {10.1063/1.5025607},
journal = {Applied Physics Letters},
number = 18,
volume = 112,
place = {United States},
year = {2018},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5025607

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Cited by: 1 work
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