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Title: Valence, exchange interaction, and location of Mn ions in polycrystalline M n x G a 1 - x N ( x 0.04 )

In this paper, we present an experimental study for polycrystalline samples of the diluted magnetic semiconductor $$\mathrm{M}{\mathrm{n}}_{x}\mathrm{G}{\mathrm{a}}_{1{-}x}\mathrm{N}(x{\le}0.04)$$ in order to address some of the existing controversial issues. X-ray and neutron diffraction, x-ray absorption near-edge structure, and electron paramagnetic resonance experiments were used to characterize the structural, electronic, and magnetic properties of the samples, and inelastic neutron scattering was employed to determine the magnetic excitations associated with Mn monomers and dimers. Our main conclusions are as follows: (i) The valence of the Mn ions is $2+$. (ii) The $$\mathrm{M}{\mathrm{n}}^{2+}$$ ions experience a substantial single-ion axial anisotropy with parameter D = 0.027(3) meV. (iii) Nearest-neighbor $$\mathrm{M}{\mathrm{n}}^{2+}$$ ions are coupled antiferromagnetically. Finally, the exchange parameter $$J={-}0.140(7)\mathrm{meV}$$ is independent of the Mn content $x$; i.e., there is no evidence for hole-induced modifications of $J$ towards a potentially high Curie temperature postulated in the literature.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [4]
  1. Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. for Neutron Scattering
  2. Univ. of Bern (Switzerland). Dept. of Chemistry and Biochemistry
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Neutron Scattering Division
  4. Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; magnetic semiconductors
OSTI Identifier:
1435214
Alternate Identifier(s):
OSTI ID: 1432574

Furrer, A., Kramer, K. W., Podlesnyak, A., Pomjakushin, V., Sheptyakov, D., and Safonova, O. V.. Valence, exchange interaction, and location of Mn ions in polycrystalline MnxGa1-xN(x≤0.04). United States: N. p., Web. doi:10.1103/PhysRevB.97.140102.
Furrer, A., Kramer, K. W., Podlesnyak, A., Pomjakushin, V., Sheptyakov, D., & Safonova, O. V.. Valence, exchange interaction, and location of Mn ions in polycrystalline MnxGa1-xN(x≤0.04). United States. doi:10.1103/PhysRevB.97.140102.
Furrer, A., Kramer, K. W., Podlesnyak, A., Pomjakushin, V., Sheptyakov, D., and Safonova, O. V.. 2018. "Valence, exchange interaction, and location of Mn ions in polycrystalline MnxGa1-xN(x≤0.04)". United States. doi:10.1103/PhysRevB.97.140102.
@article{osti_1435214,
title = {Valence, exchange interaction, and location of Mn ions in polycrystalline MnxGa1-xN(x≤0.04)},
author = {Furrer, A. and Kramer, K. W. and Podlesnyak, A. and Pomjakushin, V. and Sheptyakov, D. and Safonova, O. V.},
abstractNote = {In this paper, we present an experimental study for polycrystalline samples of the diluted magnetic semiconductor $\mathrm{M}{\mathrm{n}}_{x}\mathrm{G}{\mathrm{a}}_{1{-}x}\mathrm{N}(x{\le}0.04)$ in order to address some of the existing controversial issues. X-ray and neutron diffraction, x-ray absorption near-edge structure, and electron paramagnetic resonance experiments were used to characterize the structural, electronic, and magnetic properties of the samples, and inelastic neutron scattering was employed to determine the magnetic excitations associated with Mn monomers and dimers. Our main conclusions are as follows: (i) The valence of the Mn ions is $2+$. (ii) The $\mathrm{M}{\mathrm{n}}^{2+}$ ions experience a substantial single-ion axial anisotropy with parameter D = 0.027(3) meV. (iii) Nearest-neighbor $\mathrm{M}{\mathrm{n}}^{2+}$ ions are coupled antiferromagnetically. Finally, the exchange parameter $J={-}0.140(7)\mathrm{meV}$ is independent of the Mn content $x$; i.e., there is no evidence for hole-induced modifications of $J$ towards a potentially high Curie temperature postulated in the literature.},
doi = {10.1103/PhysRevB.97.140102},
journal = {Physical Review B},
number = 14,
volume = 97,
place = {United States},
year = {2018},
month = {4}
}

Works referenced in this record:

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986
  • Amano, H.; Sawaki, N.; Akasaki, I.
  • Applied Physics Letters, Vol. 48, Issue 5, p. 353-355
  • DOI: 10.1063/1.96549