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Title: Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys

Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III–V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this paper, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Finally, image quantification of atomic column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [3] ;  [4] ;  [3] ;  [3]
  1. Naval Research Lab. (NRL), Washington, DC (United States)
  2. Sotera Defense Solutions, Inc., Annapolis Junction, MD (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry
  4. Univ. of California, Berkeley, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 11; Journal Issue: 3; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Naval Research Lab. (NRL), Washington, DC (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
clustering; HAADF; III-V alloys; image quantification; InAlAsSb; photovoltaics; STEM
OSTI Identifier:
1435080

Hirst, Louise C., Kotulak, Nicole A., Tomasulo, Stephanie, Abell, Josh, Gonzalez, Maria, Yakes, Michael K., Meyer, Jerry R., Walters, Robert J., Song, Cheng Yu, Specht, Petra, Ercius, Peter, and Kisielowski, Christian. Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys. United States: N. p., Web. doi:10.1021/acsnano.6b07732.
Hirst, Louise C., Kotulak, Nicole A., Tomasulo, Stephanie, Abell, Josh, Gonzalez, Maria, Yakes, Michael K., Meyer, Jerry R., Walters, Robert J., Song, Cheng Yu, Specht, Petra, Ercius, Peter, & Kisielowski, Christian. Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys. United States. doi:10.1021/acsnano.6b07732.
Hirst, Louise C., Kotulak, Nicole A., Tomasulo, Stephanie, Abell, Josh, Gonzalez, Maria, Yakes, Michael K., Meyer, Jerry R., Walters, Robert J., Song, Cheng Yu, Specht, Petra, Ercius, Peter, and Kisielowski, Christian. 2017. "Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys". United States. doi:10.1021/acsnano.6b07732. https://www.osti.gov/servlets/purl/1435080.
@article{osti_1435080,
title = {Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys},
author = {Hirst, Louise C. and Kotulak, Nicole A. and Tomasulo, Stephanie and Abell, Josh and Gonzalez, Maria and Yakes, Michael K. and Meyer, Jerry R. and Walters, Robert J. and Song, Cheng Yu and Specht, Petra and Ercius, Peter and Kisielowski, Christian},
abstractNote = {Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III–V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this paper, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Finally, image quantification of atomic column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.},
doi = {10.1021/acsnano.6b07732},
journal = {ACS Nano},
number = 3,
volume = 11,
place = {United States},
year = {2017},
month = {3}
}