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Title: Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Abstract

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge 2 Sb 2 Te 5 ). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc 0.2 Sb 2 Te 3 ) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

Authors:
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Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1434999
Grant/Contract Number:  
FG02-13ER46056
Resource Type:
Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 358 Journal Issue: 6369; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Country of Publication:
United States
Language:
English

Citation Formats

Rao, Feng, Ding, Keyuan, Zhou, Yuxing, Zheng, Yonghui, Xia, Mengjiao, Lv, Shilong, Song, Zhitang, Feng, Songlin, Ronneberger, Ider, Mazzarello, Riccardo, Zhang, Wei, and Ma, Evan. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. United States: N. p., 2017. Web. doi:10.1126/science.aao3212.
Rao, Feng, Ding, Keyuan, Zhou, Yuxing, Zheng, Yonghui, Xia, Mengjiao, Lv, Shilong, Song, Zhitang, Feng, Songlin, Ronneberger, Ider, Mazzarello, Riccardo, Zhang, Wei, & Ma, Evan. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. United States. doi:10.1126/science.aao3212.
Rao, Feng, Ding, Keyuan, Zhou, Yuxing, Zheng, Yonghui, Xia, Mengjiao, Lv, Shilong, Song, Zhitang, Feng, Songlin, Ronneberger, Ider, Mazzarello, Riccardo, Zhang, Wei, and Ma, Evan. Thu . "Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing". United States. doi:10.1126/science.aao3212.
@article{osti_1434999,
title = {Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing},
author = {Rao, Feng and Ding, Keyuan and Zhou, Yuxing and Zheng, Yonghui and Xia, Mengjiao and Lv, Shilong and Song, Zhitang and Feng, Songlin and Ronneberger, Ider and Mazzarello, Riccardo and Zhang, Wei and Ma, Evan},
abstractNote = {Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge 2 Sb 2 Te 5 ). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc 0.2 Sb 2 Te 3 ) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.},
doi = {10.1126/science.aao3212},
journal = {Science},
number = 6369,
volume = 358,
place = {United States},
year = {2017},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1126/science.aao3212

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