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Title: Pseudospin Electronics in Phosphorene Nanoribbons

Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we propose edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.
Authors:
 [1] ;  [1]
  1. Univ. of Wisconsin-Madison, Madison, WI (United States)
Publication Date:
Grant/Contract Number:
SC0008712
Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Research Org:
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY
OSTI Identifier:
1434273
Alternate Identifier(s):
OSTI ID: 1414046

Soleimanikahnoj, S., and Knezevic, I.. Pseudospin Electronics in Phosphorene Nanoribbons. United States: N. p., Web. doi:10.1103/PhysRevApplied.8.064021.
Soleimanikahnoj, S., & Knezevic, I.. Pseudospin Electronics in Phosphorene Nanoribbons. United States. doi:10.1103/PhysRevApplied.8.064021.
Soleimanikahnoj, S., and Knezevic, I.. 2017. "Pseudospin Electronics in Phosphorene Nanoribbons". United States. doi:10.1103/PhysRevApplied.8.064021.
@article{osti_1434273,
title = {Pseudospin Electronics in Phosphorene Nanoribbons},
author = {Soleimanikahnoj, S. and Knezevic, I.},
abstractNote = {Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we propose edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.},
doi = {10.1103/PhysRevApplied.8.064021},
journal = {Physical Review Applied},
number = 6,
volume = 8,
place = {United States},
year = {2017},
month = {12}
}

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