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This content will become publicly available on April 17, 2019

Title: Silicon compatible Sn-based resistive switching memory

Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [4] ;  [2] ;  [4] ;  [1]
  1. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA, Institute for Molecular Engineering
  2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA
  3. Chemical Engineering and Materials Engineering Department, New Mexico Institute of Mining and Technology, Socorro, USA
  4. Department of Electrical Engineering, University of Norte Dame, Notre Dame, USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 20; Related Information: CHORUS Timestamp: 2018-05-24 05:14:52; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1434172