skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on April 17, 2019

Title: Silicon compatible Sn-based resistive switching memory

Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [4] ;  [2] ;  [4] ;  [1]
  1. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA, Institute for Molecular Engineering
  2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA
  3. Chemical Engineering and Materials Engineering Department, New Mexico Institute of Mining and Technology, Socorro, USA
  4. Department of Electrical Engineering, University of Norte Dame, Notre Dame, USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 20; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1434172

Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United Kingdom: N. p., Web. doi:10.1039/C8NR01540F.
Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, & Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United Kingdom. doi:10.1039/C8NR01540F.
Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. 2018. "Silicon compatible Sn-based resistive switching memory". United Kingdom. doi:10.1039/C8NR01540F.
@article{osti_1434172,
title = {Silicon compatible Sn-based resistive switching memory},
author = {Sonde, Sushant and Chakrabarti, Bhaswar and Liu, Yuzi and Sasikumar, Kiran and Lin, Jianqiang and Stan, Liliana and Divan, Ralu and Ocola, Leonidas E. and Rosenmann, Daniel and Choudhury, Pabitra and Ni, Kai and Sankaranarayanan, Subramanian K. R. S. and Datta, Suman and Guha, Supratik},
abstractNote = {Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.},
doi = {10.1039/C8NR01540F},
journal = {Nanoscale},
number = 20,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {1}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Ab initiomolecular dynamics for liquid metals
journal, January 1993

A climbing image nudged elastic band method for finding saddle points and minimum energy paths
journal, December 2000
  • Henkelman, Graeme; Uberuaga, Blas P.; Jónsson, Hannes
  • The Journal of Chemical Physics, Vol. 113, Issue 22, p. 9901-9904
  • DOI: 10.1063/1.1329672

Memristive devices for computing
journal, January 2013
  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240