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Title: Epitaxial corundum-VTiO 3 thin films grown on c-cut sapphire

Corundum structured VTiO 3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy. The properties of the film were characterized by reflection high energy electron diffraction, x-ray diffraction, transmission electron microscopy, and photoemission spectroscopy. All the structural probes clearly indicate the corundum structure of the film. X-ray photoemission spectroscopy (XPS) indicates that V is in a 3+ charge state implying that Ti also needs to adopt a 3+ charge state in order for the corundum structure to form. However, the Ti-2p XPS, while clearly broadened to the lower binding energy side compared to TiO 2, also exhibits a pronounced Ti 4+ component. This is tentatively assigned to a final state effect in XPS measurements and not as the true cation state. In conclusion, the valence band spectra show occupation of 3d metal states that resemble more closely those of Ti 2O 3 than for V 2O 3, suggesting that only the a1g molecular states are occupied.
 [1] ;  [2] ;  [3] ;  [1]
  1. Univ. of South Florida, Tampa, FL (United States)
  2. Univ. of Nebraska, Lincoln, NE (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0040-6090
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 631; Journal Issue: C; Journal ID: ISSN 0040-6090
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
29 ENERGY PLANNING, POLICY AND ECONOMY; Epitaxial oxide filmsMixed oxidesCorundumVanadiaTitaniaX-ray photoemission spectroscopyMolecular beam epitaxy
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1419110