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Title: Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire

Abstract

Corundum structured VTiO3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy. The properties of the film were characterized by reflection high energy electron diffraction, x-ray diffraction, transmission electron microscopy, and photoemission spectroscopy. All the structural probes clearly indicate the corundum structure of the film. X-ray photoemission spectroscopy (XPS) indicates that V is in a 3+ charge state implying that Ti also needs to adopt a 3+ charge state in order for the corundum structure to form. However, the Ti-2p XPS, while clearly broadened to the lower binding energy side compared to TiO2, also exhibits a pronounced Ti4+ component. This is tentatively assigned to a final state effect in XPS measurements and not as the true cation state. In conclusion, the valence band spectra show occupation of 3d metal states that resemble more closely those of Ti2O3 than for V2O3, suggesting that only the a1g molecular states are occupied.

Authors:
 [1];  [2];  [3];  [1]
  1. Univ. of South Florida, Tampa, FL (United States)
  2. Univ. of Nebraska, Lincoln, NE (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1433962
Alternate Identifier(s):
OSTI ID: 1419110
Report Number(s):
BNL-203484-2018-JAAM
Journal ID: ISSN 0040-6090
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 631; Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY; Epitaxial oxide filmsMixed oxidesCorundumVanadiaTitaniaX-ray photoemission spectroscopyMolecular beam epitaxy

Citation Formats

Kramer, Alan, Sutter, Eli, Su, Dong, and Batzill, Matthias. Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire. United States: N. p., 2017. Web. https://doi.org/10.1016/j.tsf.2017.04.018.
Kramer, Alan, Sutter, Eli, Su, Dong, & Batzill, Matthias. Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire. United States. https://doi.org/10.1016/j.tsf.2017.04.018
Kramer, Alan, Sutter, Eli, Su, Dong, and Batzill, Matthias. Wed . "Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire". United States. https://doi.org/10.1016/j.tsf.2017.04.018. https://www.osti.gov/servlets/purl/1433962.
@article{osti_1433962,
title = {Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire},
author = {Kramer, Alan and Sutter, Eli and Su, Dong and Batzill, Matthias},
abstractNote = {Corundum structured VTiO3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy. The properties of the film were characterized by reflection high energy electron diffraction, x-ray diffraction, transmission electron microscopy, and photoemission spectroscopy. All the structural probes clearly indicate the corundum structure of the film. X-ray photoemission spectroscopy (XPS) indicates that V is in a 3+ charge state implying that Ti also needs to adopt a 3+ charge state in order for the corundum structure to form. However, the Ti-2p XPS, while clearly broadened to the lower binding energy side compared to TiO2, also exhibits a pronounced Ti4+ component. This is tentatively assigned to a final state effect in XPS measurements and not as the true cation state. In conclusion, the valence band spectra show occupation of 3d metal states that resemble more closely those of Ti2O3 than for V2O3, suggesting that only the a1g molecular states are occupied.},
doi = {10.1016/j.tsf.2017.04.018},
journal = {Thin Solid Films},
number = C,
volume = 631,
place = {United States},
year = {2017},
month = {4}
}

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Cited by: 4 works
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    Works referencing / citing this record:

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