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This content will become publicly available on April 18, 2019

Title: Modeling of the gate-controlled Kondo effect at carbon point defects in graphene

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
DOE-FG02-99ER45742
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1433568

May, Daniel, Lo, Po-Wei, Deltenre, Kira, Henke, Anika, Mao, Jinhai, Jiang, Yuhang, Li, Guohong, Andrei, Eva Y., Guo, Guang-Yu, and Anders, Frithjof B.. Modeling of the gate-controlled Kondo effect at carbon point defects in graphene. United States: N. p., Web. doi:10.1103/PhysRevB.97.155419.
May, Daniel, Lo, Po-Wei, Deltenre, Kira, Henke, Anika, Mao, Jinhai, Jiang, Yuhang, Li, Guohong, Andrei, Eva Y., Guo, Guang-Yu, & Anders, Frithjof B.. Modeling of the gate-controlled Kondo effect at carbon point defects in graphene. United States. doi:10.1103/PhysRevB.97.155419.
May, Daniel, Lo, Po-Wei, Deltenre, Kira, Henke, Anika, Mao, Jinhai, Jiang, Yuhang, Li, Guohong, Andrei, Eva Y., Guo, Guang-Yu, and Anders, Frithjof B.. 2018. "Modeling of the gate-controlled Kondo effect at carbon point defects in graphene". United States. doi:10.1103/PhysRevB.97.155419.
@article{osti_1433568,
title = {Modeling of the gate-controlled Kondo effect at carbon point defects in graphene},
author = {May, Daniel and Lo, Po-Wei and Deltenre, Kira and Henke, Anika and Mao, Jinhai and Jiang, Yuhang and Li, Guohong and Andrei, Eva Y. and Guo, Guang-Yu and Anders, Frithjof B.},
abstractNote = {},
doi = {10.1103/PhysRevB.97.155419},
journal = {Physical Review B},
number = 15,
volume = 97,
place = {United States},
year = {2018},
month = {4}
}

Works referenced in this record:

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Tunable Kondo effect in graphene with defects
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From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
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