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This content will become publicly available on April 13, 2019

Title: Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Authors:
 [1] ;  [2] ;  [3] ; ORCiD logo [1] ;  [2] ; ORCiD logo [4] ;  [5] ;  [5]
  1. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA
  2. Intel Corporation, Santa Clara, California 95054, USA
  3. Materials Department, University of California, Santa Barbara, California 93106, USA
  4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
  5. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA, Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Grant/Contract Number:
AR000067
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 15; Related Information: CHORUS Timestamp: 2018-04-13 11:39:41; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1433041