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Title: Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Authors:
 [1] ;  [2] ;  [3] ; ORCiD logo [1] ;  [2] ; ORCiD logo [4] ;  [5] ;  [5]
  1. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA
  2. Intel Corporation, Santa Clara, California 95054, USA
  3. Materials Department, University of California, Santa Barbara, California 93106, USA
  4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
  5. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA, Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Grant/Contract Number:
AR000067
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1433041

Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., and Bowers, John E.. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si. United States: N. p., Web. doi:10.1063/1.5026147.
Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., & Bowers, John E.. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si. United States. doi:10.1063/1.5026147.
Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., and Bowers, John E.. 2018. "Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si". United States. doi:10.1063/1.5026147.
@article{osti_1433041,
title = {Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si},
author = {Jung, Daehwan and Herrick, Robert and Norman, Justin and Turnlund, Katherine and Jan, Catherine and Feng, Kaiyin and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.5026147},
journal = {Applied Physics Letters},
number = 15,
volume = 112,
place = {United States},
year = {2018},
month = {4}
}