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Title: Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 1.15 ×10 16 Xe/cm 2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the range from ~6 dpa at the film surface to ~20 dpa at the SiC/Si interface. A transformation of homonuclear C-C bonds from sp 3 to sp 2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. Lastly, the results from this study may have a significant impact on applications of SiC as structural components of advanced nuclear energy systems.
Authors:
 [1] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1]
  1. Lanzhou Univ. (China). School of Nuclear Science and Technology
  2. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Report Number(s):
PNNL-SA-130017
Journal ID: ISSN 0022-3115; PII: S0022311517317567
Grant/Contract Number:
11675068; lzujbky-2016-28; AC05-76RL01830
Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 505; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Research Org:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org:
USDOE; National Natural Science Foundation of China (NNSFC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY; Silicon carbide; Crystallization; Ion irradiation
OSTI Identifier:
1432510

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States: N. p., Web. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, & Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. 2018. "Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures". United States. doi:10.1016/j.jnucmat.2018.04.005.
@article{osti_1432510,
title = {Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Wang, Tieshan},
abstractNote = {Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 1.15 ×1016 Xe/cm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the range from ~6 dpa at the film surface to ~20 dpa at the SiC/Si interface. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. Lastly, the results from this study may have a significant impact on applications of SiC as structural components of advanced nuclear energy systems.},
doi = {10.1016/j.jnucmat.2018.04.005},
journal = {Journal of Nuclear Materials},
number = ,
volume = 505,
place = {United States},
year = {2018},
month = {4}
}