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Title: Engineering Electronic Band Structure of Indium-doped Cd1-xMgxO Alloys for Solar Power Conversion Applications

Abstract

CdO-based transparent conducting oxide thin films have great potential applications in many optoelectronic devices because of their high mobility, low resistivity, and high transparency over a wide spectral range. However, because of the low band gap of only 2.2 eV, the transparency of this material is limited in the UV spectral range. Alloying of undoped CdO with a larger band gap material such as MgO increases the band gap but tends to degrade electrical conductivity. Recently, it has been demonstrated that In doping of CdO greatly improves the electrical characteristic of this material by increasing both the carrier density and the mobility. In this work, we present a comprehensive study on CdMgO alloys doped with up to 4 % In. Here, we show that the doping with In extends the composition range of conducting films with a composition of up to 40% of Mg and a band gap of 3.5 eV. Our results could open up a new pathway to transparent conducive oxides that could be used as low-resistivity contacts and UV-transparent electrn emitter windows in thin-film photovoltaic technologies.

Authors:
 [1];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. City Univ. of Hong Kong (China). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Research Foundation Singapore; Research Grants Council (RGC) of Hong Kong; City Univ. of Hong Kong (China)
OSTI Identifier:
1432239
Alternate Identifier(s):
OSTI ID: 1409715
Grant/Contract Number:  
AC02-05CH11231; CityU 11267516
Resource Type:
Accepted Manuscript
Journal Name:
Energy Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Related Information: © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim; Journal ID: ISSN 2194-4288
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band-structure engineering; cadmium magnesium oxide; photovoltaics; thin films; transparent conductors

Citation Formats

Lee, Yeonbae, Liu, Chao Ping, Yu, Kin Man, and Walukiewicz, Wladek. Engineering Electronic Band Structure of Indium-doped Cd1-xMgxO Alloys for Solar Power Conversion Applications. United States: N. p., 2017. Web. doi:10.1002/ente.201700641.
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Lee, Yeonbae, Liu, Chao Ping, Yu, Kin Man, & Walukiewicz, Wladek. Engineering Electronic Band Structure of Indium-doped Cd1-xMgxO Alloys for Solar Power Conversion Applications. United States. https://doi.org/10.1002/ente.201700641
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Lee, Yeonbae, Liu, Chao Ping, Yu, Kin Man, and Walukiewicz, Wladek. Mon . "Engineering Electronic Band Structure of Indium-doped Cd1-xMgxO Alloys for Solar Power Conversion Applications". United States. https://doi.org/10.1002/ente.201700641. https://www.osti.gov/servlets/purl/1432239.
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@article{osti_1432239,
title = {Engineering Electronic Band Structure of Indium-doped Cd1-xMgxO Alloys for Solar Power Conversion Applications},
author = {Lee, Yeonbae and Liu, Chao Ping and Yu, Kin Man and Walukiewicz, Wladek},
abstractNote = {CdO-based transparent conducting oxide thin films have great potential applications in many optoelectronic devices because of their high mobility, low resistivity, and high transparency over a wide spectral range. However, because of the low band gap of only 2.2 eV, the transparency of this material is limited in the UV spectral range. Alloying of undoped CdO with a larger band gap material such as MgO increases the band gap but tends to degrade electrical conductivity. Recently, it has been demonstrated that In doping of CdO greatly improves the electrical characteristic of this material by increasing both the carrier density and the mobility. In this work, we present a comprehensive study on CdMgO alloys doped with up to 4 % In. Here, we show that the doping with In extends the composition range of conducting films with a composition of up to 40% of Mg and a band gap of 3.5 eV. Our results could open up a new pathway to transparent conducive oxides that could be used as low-resistivity contacts and UV-transparent electrn emitter windows in thin-film photovoltaic technologies.},
doi = {10.1002/ente.201700641},
journal = {Energy Technology},
number = 1,
volume = 6,
place = {United States},
year = {2017},
month = {11}
}
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Journal Article:
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https://doi.org/10.1002/ente.201700641
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Figures / Tables:

Figure 1 Figure 1: GIXRD patterns of Cd1-xMgxO:In alloys films with x in the range of 0.065 to 1.
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