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Title: Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-07ER46465
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 9 Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1431397

Ireland, R. M., Wu, Liang, Salehi, M., Oh, S., Armitage, N. P., and Katz, H. E.. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime. United States: N. p., Web. doi:10.1103/PhysRevApplied.9.044003.
Ireland, R. M., Wu, Liang, Salehi, M., Oh, S., Armitage, N. P., & Katz, H. E.. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime. United States. doi:10.1103/PhysRevApplied.9.044003.
Ireland, R. M., Wu, Liang, Salehi, M., Oh, S., Armitage, N. P., and Katz, H. E.. 2018. "Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime". United States. doi:10.1103/PhysRevApplied.9.044003.
@article{osti_1431397,
title = {Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime},
author = {Ireland, R. M. and Wu, Liang and Salehi, M. and Oh, S. and Armitage, N. P. and Katz, H. E.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.9.044003},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {2018},
month = {4}
}

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010

Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009

A topological Dirac insulator in a quantum spin Hall phase
journal, April 2008
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