AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding
Journal Article
·
· Energy Science & Engineering
- Univ. of Wisconsin, Madison, WI (United States). Department of Electrical and Computer Engineering
- Univ. of Wisconsin, Madison, WI (United States). Department of Material Science and Engineering
- Univ. of Wisconsin, Madison, WI (United States). Department of Biomedical Engineering
- Univ. of Texas, Arlington, TX (United States). Department of Electrical Engineering
- Yeungnam University, Gyeongsan (Korea). Department of Physics
- University of Illinois at Urbana‐Champaign, Urbana, IL (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1431248
- Report Number(s):
- NREL/JA-5J00-71243
- Journal Information:
- Energy Science & Engineering, Vol. 6, Issue 1; ISSN 2050-0505
- Publisher:
- Society of Chemical Industry, WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 10 works
Citation information provided by
Web of Science
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