skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

Abstract

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [2];  [2];  [3];  [4];  [5];  [6];  [2];  [2];  [7];  [1]
  1. Univ. of Wisconsin, Madison, WI (United States). Department of Electrical and Computer Engineering
  2. Univ. of Wisconsin, Madison, WI (United States). Department of Material Science and Engineering
  3. Univ. of Wisconsin, Madison, WI (United States). Department of Biomedical Engineering
  4. Univ. of Texas, Arlington, TX (United States). Department of Electrical Engineering
  5. Yeungnam University, Gyeongsan (Korea). Department of Physics
  6. University of Illinois at Urbana‐Champaign, Urbana, IL (United States)
  7. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1431248
Report Number(s):
NREL/JA-5J00-71243
Journal ID: ISSN 2050-0505
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Energy Science & Engineering
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2050-0505
Publisher:
Society of Chemical Industry, Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING; epitaxy; heterogeneous; solar cell; thin films

Citation Formats

Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, and Ma, Zhenqiang. AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. United States: N. p., 2018. Web. doi:10.1002/ese3.182.
Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, & Ma, Zhenqiang. AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. United States. doi:10.1002/ese3.182.
Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, and Ma, Zhenqiang. Thu . "AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding". United States. doi:10.1002/ese3.182. https://www.osti.gov/servlets/purl/1431248.
@article{osti_1431248,
title = {AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding},
author = {Xiong, Kanglin and Mi, Hongyi and Chang, Tzu-Hsuan and Liu, Dong and Xia, Zhenyang and Wu, Meng-Yin and Yin, Xin and Gong, Shaoqin and Zhou, Weidong and Shin, Jae Cheol and Li, Xiuling and Arnold, Michael and Wang, Xudong and Yuan, Hao-Chih and Ma, Zhenqiang},
abstractNote = {A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.},
doi = {10.1002/ese3.182},
journal = {Energy Science & Engineering},
number = 1,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials
journal, December 2006

  • Ahn, Jong-Hyun; Kim, Hoon-Sik; Lee, Keon Jae
  • Science, Vol. 314, Issue 5806, p. 1754-1757
  • DOI: 10.1126/science.1132394

Gallium arsenide and other compound semiconductors on silicon
journal, October 1990

  • Fang, S. F.; Adomi, K.; Iyer, S.
  • Journal of Applied Physics, Vol. 68, Issue 7
  • DOI: 10.1063/1.346284

Two-terminal metal-inter-connected multijunction III-V solar cells: Two-terminal metal-interconnected multijunction III-V solar cells
journal, February 2014

  • Lin, Chieh-Ting; McMahon, William E.; Ward, James S.
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 5
  • DOI: 10.1002/pip.2468

Research progress of perovskite materials in photocatalysis- and photovoltaics-related energy conversion and environmental treatment
journal, January 2015

  • Wang, Wei; Tadé, Moses O.; Shao, Zongping
  • Chemical Society Reviews, Vol. 44, Issue 15
  • DOI: 10.1039/C5CS00113G

Chalcogenide glass-ceramics: Functional design and crystallization mechanism
journal, April 2018


Recent Progress in Metal-Organic Frameworks for Applications in Electrocatalytic and Photocatalytic Water Splitting
journal, January 2017


Inorganic perovskite photocatalysts for solar energy utilization
journal, January 2016

  • Zhang, Guan; Liu, Gang; Wang, Lianzhou
  • Chemical Society Reviews, Vol. 45, Issue 21
  • DOI: 10.1039/C5CS00769K

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding
journal, February 2013

  • Liang, Jianbo; Miyazaki, Tatsuya; Morimoto, Masashi
  • Applied Physics Express, Vol. 6, Issue 2
  • DOI: 10.7567/APEX.6.021801

Device Architectures for Enhanced Photon Recycling in Thin-Film Multijunction Solar Cells
journal, August 2014

  • Sheng, Xing; Yun, Myoung Hee; Zhang, Chen
  • Advanced Energy Materials, Vol. 5, Issue 1
  • DOI: 10.1002/aenm.201400919

Reuse of GaAs substrates for epitaxial lift-off by employing protection layers
journal, February 2012

  • Lee, Kyusang; Zimmerman, Jeramy D.; Xiao, Xin
  • Journal of Applied Physics, Vol. 111, Issue 3
  • DOI: 10.1063/1.3684555

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
journal, March 2013

  • Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2583

GaInP∕GaAs dual junction solar cells on Ge∕Si epitaxial templates
journal, March 2008

  • Archer, Melissa J.; Law, Daniel C.; Mesropian, Shoghig
  • Applied Physics Letters, Vol. 92, Issue 10
  • DOI: 10.1063/1.2887904

Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
journal, June 1990

  • Yablonovitch, E.; Hwang, D. M.; Gmitter, T. J.
  • Applied Physics Letters, Vol. 56, Issue 24
  • DOI: 10.1063/1.102896

III-V/Si hybrid photonic devices by direct fusion bonding
journal, April 2012

  • Tanabe, Katsuaki; Watanabe, Katsuyuki; Arakawa, Yasuhiko
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00349

Detailed balance limit of the efficiency of tandem solar cells
journal, May 1980


Growth of GaAs on Si by MOVCD
journal, September 1984


Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon
journal, March 2014


Surface-activating-bonding-based low-resistance Si/III-V junctions
journal, June 2013

  • Morimoto, M.; Nishida, S.; Shigekawa, N.
  • Electronics Letters, Vol. 49, Issue 13
  • DOI: 10.1049/el.2013.1553

Vapor phase epitaxial liftoff of GaAs and silicon single crystal films
journal, June 1999


Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency: Wafer bonded four-junction concentrator solar cells with 44.7% efficiency
journal, January 2014

  • Dimroth, Frank; Grave, Matthias; Beutel, Paul
  • Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 3
  • DOI: 10.1002/pip.2475

Solar cell efficiency tables (Version 45): Solar cell efficiency tables
journal, December 2014

  • Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 1
  • DOI: 10.1002/pip.2573

Printing-based assembly of quadruple-junction four-terminal microscale solar cells and their use in high-efficiency modules
journal, April 2014

  • Sheng, Xing; Bower, Christopher A.; Bonafede, Salvatore
  • Nature Materials, Vol. 13, Issue 6
  • DOI: 10.1038/nmat3946

High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition
journal, September 1995

  • Soga, T.; Kato, T.; Yang, M.
  • Journal of Applied Physics, Vol. 78, Issue 6
  • DOI: 10.1063/1.359880

Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
journal, May 2013

  • Essig, S.; Moutanabbir, O.; Wekkeli, A.
  • Journal of Applied Physics, Vol. 113, Issue 20
  • DOI: 10.1063/1.4807905

High rate epitaxial lift-off of InGaP films from GaAs substrates
journal, April 2000

  • Schermer, J. J.; Bauhuis, G. J.; Mulder, P.
  • Applied Physics Letters, Vol. 76, Issue 15
  • DOI: 10.1063/1.126276

HF Species and Dissolved Oxygen on the Epitaxial Lift-Off Process of GaAs Using AlAsP Release Layers
journal, January 2008

  • van Niftrik, A. T. J.; Schermer, J. J.; Bauhuis, G. J.
  • Journal of The Electrochemical Society, Vol. 155, Issue 1
  • DOI: 10.1149/1.2799737

Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding
journal, October 2013