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Title: AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.
Authors:
 [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [2] ;  [2] ;  [7] ;  [1]
  1. Univ. of Wisconsin, Madison, WI (United States). Department of Electrical and Computer Engineering
  2. Univ. of Wisconsin, Madison, WI (United States). Department of Material Science and Engineering
  3. Univ. of Wisconsin, Madison, WI (United States). Department of Biomedical Engineering
  4. Univ. of Texas, Arlington, TX (United States). Department of Electrical Engineering
  5. Yeungnam University, Gyeongsan (Korea). Department of Physics
  6. University of Illinois at Urbana‐Champaign, Urbana, IL (United States)
  7. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-71243
Journal ID: ISSN 2050-0505
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Energy Science & Engineering
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2050-0505
Publisher:
Society of Chemical Industry, Wiley
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING; epitaxy; heterogeneous; solar cell; thin films
OSTI Identifier:
1431248

Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, and Ma, Zhenqiang. AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. United States: N. p., Web. doi:10.1002/ese3.182.
Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, & Ma, Zhenqiang. AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. United States. doi:10.1002/ese3.182.
Xiong, Kanglin, Mi, Hongyi, Chang, Tzu-Hsuan, Liu, Dong, Xia, Zhenyang, Wu, Meng-Yin, Yin, Xin, Gong, Shaoqin, Zhou, Weidong, Shin, Jae Cheol, Li, Xiuling, Arnold, Michael, Wang, Xudong, Yuan, Hao-Chih, and Ma, Zhenqiang. 2018. "AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding". United States. doi:10.1002/ese3.182. https://www.osti.gov/servlets/purl/1431248.
@article{osti_1431248,
title = {AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding},
author = {Xiong, Kanglin and Mi, Hongyi and Chang, Tzu-Hsuan and Liu, Dong and Xia, Zhenyang and Wu, Meng-Yin and Yin, Xin and Gong, Shaoqin and Zhou, Weidong and Shin, Jae Cheol and Li, Xiuling and Arnold, Michael and Wang, Xudong and Yuan, Hao-Chih and Ma, Zhenqiang},
abstractNote = {A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.},
doi = {10.1002/ese3.182},
journal = {Energy Science & Engineering},
number = 1,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}

Works referenced in this record:

Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials
journal, December 2006
  • Ahn, Jong-Hyun; Kim, Hoon-Sik; Lee, Keon Jae
  • Science, Vol. 314, Issue 5806, p. 1754-1757
  • DOI: 10.1126/science.1132394