Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman
Abstract
The currently reported optical-phonon-scattering-limited carrier mobility of MoS2 is up to 417 cm2 V–1 s–1 with two-side dielectric screening: one normal-κ side and one high-κ side. Herein, using picosecond energy transport state-resolved Raman (ET-Raman), we demonstrated very fast hot carrier diffusion in μm-scale (lateral) unconstrained MoS2 (1.8–18 nm thick) on a glass substrate; this method enables only one-side normal-κ dielectric screening. The ET-Raman method directly probes the diffusion of the hot carrier and its contribution to phonon transfer without contact and additional sample preparation and provides unprecedented insight into the intrinsic D of MoS2. The calculated D values span from 0.76 to 9.7 cm2 s–1. A nonmonotonic thickness-dependent D trend is discovered, and it peaks at 3.0 nm thickness. This is explained by the competition between two physical phenomena: with an increase in sample thickness, the increased screening of the substrate results in higher mobility; moreover, thicker samples are subject to more surface contamination, loose substrate contact and weaker substrate dielectric screening. The corresponding carrier mobility varies from 31.0 to 388.5 cm2 V–1 s–1. This mobility is surprisingly high considering the normal-κ and single side dielectric screening by the glass substrate. This is a direct result of the less-damaged structuremore »
- Authors:
-
[1];
[2];
[1];
[1];
[1]
- Department of Mechanical Engineering, Iowa State University, Ames, USA
- School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing, China
- Publication Date:
- Research Org.:
- Iowa State Univ., Ames, IA (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE); National Science Foundation (NSF)
- OSTI Identifier:
- 1431157
- Alternate Identifier(s):
- OSTI ID: 1547353
- Grant/Contract Number:
- DENE0000671; NE0000671
- Resource Type:
- Published Article
- Journal Name:
- RSC Advances
- Additional Journal Information:
- Journal Name: RSC Advances Journal Volume: 8 Journal Issue: 23; Journal ID: ISSN 2046-2069
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, and Wang, Xinwei. Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman. United Kingdom: N. p., 2018.
Web. doi:10.1039/C8RA01106K.
Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, & Wang, Xinwei. Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman. United Kingdom. https://doi.org/10.1039/C8RA01106K
Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, and Wang, Xinwei. Mon .
"Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman". United Kingdom. https://doi.org/10.1039/C8RA01106K.
@article{osti_1431157,
title = {Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman},
author = {Yuan, Pengyu and Tan, Hong and Wang, Ridong and Wang, Tianyu and Wang, Xinwei},
abstractNote = {The currently reported optical-phonon-scattering-limited carrier mobility of MoS2 is up to 417 cm2 V–1 s–1 with two-side dielectric screening: one normal-κ side and one high-κ side. Herein, using picosecond energy transport state-resolved Raman (ET-Raman), we demonstrated very fast hot carrier diffusion in μm-scale (lateral) unconstrained MoS2 (1.8–18 nm thick) on a glass substrate; this method enables only one-side normal-κ dielectric screening. The ET-Raman method directly probes the diffusion of the hot carrier and its contribution to phonon transfer without contact and additional sample preparation and provides unprecedented insight into the intrinsic D of MoS2. The calculated D values span from 0.76 to 9.7 cm2 s–1. A nonmonotonic thickness-dependent D trend is discovered, and it peaks at 3.0 nm thickness. This is explained by the competition between two physical phenomena: with an increase in sample thickness, the increased screening of the substrate results in higher mobility; moreover, thicker samples are subject to more surface contamination, loose substrate contact and weaker substrate dielectric screening. The corresponding carrier mobility varies from 31.0 to 388.5 cm2 V–1 s–1. This mobility is surprisingly high considering the normal-κ and single side dielectric screening by the glass substrate. This is a direct result of the less-damaged structure of MoS2 that is superior to those of MoS2 samples reported in literature studies that are subjected to various post-processing techniques to facilitate measurement. The very high hot carrier mobility reduces the local carrier concentration and enhances the Raman signal, which is also validated by our Raman signal studies and comparison with theoretical studies.},
doi = {10.1039/C8RA01106K},
journal = {RSC Advances},
number = 23,
volume = 8,
place = {United Kingdom},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1039/C8RA01106K
https://doi.org/10.1039/C8RA01106K
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 21 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Acoustic mismatch model for thermal contact resistance of van der Waals contacts
journal, January 2009
- Prasher, Ravi
- Applied Physics Letters, Vol. 94, Issue 4
Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices
journal, February 2010
- Bao, Wenzhong; Liu, Gang; Zhao, Zeng
- Nano Research, Vol. 3, Issue 2
Temperature-dependent Raman spectra and thermal conductivity of multi-walled MoS 2 nanotubes
journal, September 2017
- Yu, Dongqing; Li, Siqi; Qi, Weihong
- Applied Physics Letters, Vol. 111, Issue 12
Effect of Graphene Fermi Level on the Raman Scattering Intensity of Molecules on Graphene
journal, June 2011
- Xu, Hua; Xie, Liming; Zhang, Haoli
- ACS Nano, Vol. 5, Issue 7
High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects
journal, January 2013
- Bao, Wenzhong; Cai, Xinghan; Kim, Dohun
- Applied Physics Letters, Vol. 102, Issue 4
Electrically Driven Tuning of the Dielectric Constant in MoS 2 Layers
journal, November 2013
- Santos, Elton J. G.; Kaxiras, Efthimios
- ACS Nano, Vol. 7, Issue 12
Recent developments in compact ultrafast lasers
journal, August 2003
- Keller, Ursula
- Nature, Vol. 424, Issue 6950
Hot carrier diffusion in graphene
journal, November 2010
- Ruzicka, Brian A.; Wang, Shuai; Werake, Lalani K.
- Physical Review B, Vol. 82, Issue 19
Mobility of Charge Carriers in Semiconducting Layer Structures
journal, November 1967
- Fivaz, R.; Mooser, E.
- Physical Review, Vol. 163, Issue 3
Highly Flexible MoS 2 Thin-Film Transistors with Ion Gel Dielectrics
journal, July 2012
- Pu, Jiang; Yomogida, Yohei; Liu, Keng-Ku
- Nano Letters, Vol. 12, Issue 8
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS 2
journal, August 2013
- Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
- Nano Letters, Vol. 13, Issue 9
Effects of temperature and disorder on thermal boundary conductance at solid–solid interfaces: Nonequilibrium molecular dynamics simulations
journal, September 2007
- Stevens, Robert J.; Zhigilei, Leonid V.; Norris, Pamela M.
- International Journal of Heat and Mass Transfer, Vol. 50, Issue 19-20
Measurement of mobility in dual-gated MoS2 transistors
journal, March 2013
- Fuhrer, Michael S.; Hone, James
- Nature Nanotechnology, Vol. 8, Issue 3
Diffuse mismatch model of thermal boundary conductance using exact phonon dispersion
journal, November 2005
- Reddy, Pramod; Castelino, Kenneth; Majumdar, Arun
- Applied Physics Letters, Vol. 87, Issue 21
Pulse accumulation, radial heat conduction, and anisotropic thermal conductivity in pump-probe transient thermoreflectance
journal, November 2008
- Schmidt, Aaron J.; Chen, Xiaoyuan; Chen, Gang
- Review of Scientific Instruments, Vol. 79, Issue 11
Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness
journal, January 2017
- Yuan, Pengyu; Li, Chong; Xu, Shen
- Acta Materialia, Vol. 122
Investigation of the optical properties of MoS 2 thin films using spectroscopic ellipsometry
journal, March 2014
- Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall
- Applied Physics Letters, Vol. 104, Issue 10
High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared
journal, August 2012
- Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha
- Advanced Materials, Vol. 24, Issue 43
Atomically Thin A New Direct-Gap Semiconductor
journal, September 2010
- Mak, Kin Fai; Lee, Changgu; Hone, James
- Physical Review Letters, Vol. 105, Issue 13, Article No.136805
Geothermal energy for the benefit of the people
journal, September 2001
- Fridleifsson, Ingvar B.
- Renewable and Sustainable Energy Reviews, Vol. 5, Issue 3
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
journal, April 2012
- Liu, Han; Ye, Peide D.
- IEEE Electron Device Letters, Vol. 33, Issue 4
Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance
journal, January 2013
- Hopkins, Patrick E.
- ISRN Mechanical Engineering, Vol. 2013
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012
- Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik
- Nature Communications, Vol. 3, Issue 1
Five Orders of Magnitude Reduction in Energy Coupling across Corrugated Graphene/Substrate Interfaces
journal, February 2014
- Tang, Xiaoduan; Xu, Shen; Zhang, Jingchao
- ACS Applied Materials & Interfaces, Vol. 6, Issue 4
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
journal, July 2013
- Li, Song-Lin; Wakabayashi, Katsunori; Xu, Yong
- Nano Letters, Vol. 13, Issue 8
Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS 2
journal, April 2013
- Sahoo, Satyaprakash; Gaur, Anand P. S.; Ahmadi, Majid
- The Journal of Physical Chemistry C, Vol. 117, Issue 17
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS 2 2D Crystals
journal, January 2013
- Shi, Hongyan; Yan, Rusen; Bertolazzi, Simone
- ACS Nano, Vol. 7, Issue 2
Dependence of coupling of quasi 2-D MoS 2 with substrates on substrate types, probed by temperature dependent Raman scattering
journal, January 2014
- Su, Liqin; Zhang, Yong; Yu, Yifei
- Nanoscale, Vol. 6, Issue 9
The hot carrier diffusion coefficient of sub-10 nm virgin MoS 2 : uncovered by non-contact optical probing
journal, January 2017
- Yuan, Pengyu; Liu, Jing; Wang, Ridong
- Nanoscale, Vol. 9, Issue 20
Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide
journal, July 2012
- Wang, Rui; Ruzicka, Brian A.; Kumar, Nardeep
- Physical Review B, Vol. 86, Issue 4
Charge carrier dynamics in bulk MoS 2 crystal studied by transient absorption microscopy
journal, April 2013
- Kumar, Nardeep; He, Jiaqi; He, Dawei
- Journal of Applied Physics, Vol. 113, Issue 13
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
journal, October 2014
- Yu, Zhihao; Pan, Yiming; Shen, Yuting
- Nature Communications, Vol. 5, Issue 1
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013
- Tongay, Sefaattin; Suh, Joonki; Ataca, Can
- Scientific Reports, Vol. 3, Issue 1
Flexible and Transparent MoS 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
journal, August 2013
- Lee, Gwan-Hyoung; Yu, Young-Jun; Cui, Xu
- ACS Nano, Vol. 7, Issue 9
High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates
journal, November 2003
- McAlpine, Michael C.; Friedman, Robin S.; Jin, Song
- Nano Letters, Vol. 3, Issue 11, p. 1531-1535
Epitaxial graphene field-effect transistors on silicon substrates
journal, September 2010
- Kang, Hyun-Chul; Karasawa, Hiromi; Miyamoto, Yu
- Solid-State Electronics, Vol. 54, Issue 9
Corrugated epitaxial graphene/SiC interfaces: photon excitation and probing
journal, January 2014
- Tang, Xiaoduan; Xu, Shen; Wang, Xinwei
- Nanoscale, Vol. 6, Issue 15
How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?
journal, January 2013
- Shen, Xiaonan; Wang, Haomin; Yu, Ting
- Nanoscale, Vol. 5, Issue 8
Photothermal reflection versus temperature: Quantitative analysis
journal, May 1995
- Nestoros, Marios; Forget, Benoît C.; Christofides, Constantinos
- Physical Review B, Vol. 51, Issue 20
Van der Waals heterostructures
journal, July 2013
- Geim, A. K.; Grigorieva, I. V.
- Nature, Vol. 499, Issue 7459, p. 419-425
Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors
journal, March 2016
- Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason
- Nanotechnology, Vol. 27, Issue 16
Electronic and Optical Properties of MoS<sub>2</sub>
journal, November 2013
- Ahuja, Ushma; Dashora, Alpa
- Solid State Phenomena, Vol. 209
Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors
journal, August 2009
- Sui, Yang; Appenzeller, Joerg
- Nano Letters, Vol. 9, Issue 8
Defect Scattering in Graphene
journal, June 2009
- Chen, Jian-Hao; Cullen, W. G.; Jang, C.
- Physical Review Letters, Vol. 102, Issue 23
Theory of double-resonant Raman spectra in graphene: Intensity and line shape of defect-induced and two-phonon bands
journal, July 2011
- Venezuela, Pedro; Lazzeri, Michele; Mauri, Francesco
- Physical Review B, Vol. 84, Issue 3
Two‐layer model for photomodulated thermoreflectance of semiconductor wafers
journal, August 1996
- Christofides, C.; Diakonos, F.; Seas, A.
- Journal of Applied Physics, Vol. 80, Issue 3
Phonon-limited mobility in -type single-layer MoS from first principles
journal, March 2012
- Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.
- Physical Review B, Vol. 85, Issue 11
Influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory
journal, August 2002
- Christofides, Constantinos; Othonos, Andreas; Loizidou, Efi
- Journal of Applied Physics, Vol. 92, Issue 3
Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors
journal, January 2014
- Wang, Kangpeng; Feng, Yanyan; Chang, Chunxia
- Nanoscale, Vol. 6, Issue 18
Ultraflat graphene
journal, November 2009
- Lui, Chun Hung; Liu, Li; Mak, Kin Fai
- Nature, Vol. 462, Issue 7271
Single-layer MoS 2 roughness and sliding friction quenching by interaction with atomically flat substrates
journal, August 2014
- Quereda, J.; Castellanos-Gomez, A.; Agraït, N.
- Applied Physics Letters, Vol. 105, Issue 5
Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013
- Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
- Nature Nanotechnology, Vol. 8, Issue 7
Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS 2
journal, September 2017
- Yuan, Pengyu; Wang, Ridong; Tan, Hong
- ACS Photonics, Vol. 4, Issue 12
Polarization-dependent optical absorption of MoS2 for refractive index sensing
journal, December 2014
- Tan, Yang; He, Ruiyun; Cheng, Chen
- Scientific Reports, Vol. 4, Issue 1
Interference effect on Raman spectrum of graphene on
journal, September 2009
- Yoon, Duhee; Moon, Hyerim; Son, Young-Woo
- Physical Review B, Vol. 80, Issue 12
Size-Dependent Nonlinear Optical Properties of Atomically Thin Transition Metal Dichalcogenide Nanosheets
journal, September 2014
- Zhou, Kai-Ge; Zhao, Min; Chang, Meng-Jie
- Small, Vol. 11, Issue 6
High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide
journal, December 2014
- Strait, Jared H.; Nene, Parinita; Rana, Farhan
- Physical Review B, Vol. 90, Issue 24
Single-layer MoS2 transistors
journal, January 2011
- Radisavljevic, B.; Radenovic, A.; Brivio, J.
- Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012
- Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
- Nano Letters, Vol. 13, Issue 1, p. 100-105
Temperature-Dependent Thermal Properties of Supported MoS 2 Monolayers
journal, February 2015
- Taube, Andrzej; Judek, Jarosław; Łapińska, Anna
- ACS Applied Materials & Interfaces, Vol. 7, Issue 9
Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
journal, July 1998
- Linnros, Jan
- Journal of Applied Physics, Vol. 84, Issue 1
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
journal, September 2011
- Liu, Leitao; Kumar, S. Bala; Ouyang, Yijian
- IEEE Transactions on Electron Devices, Vol. 58, Issue 9, p. 3042-3047
Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013
- Qiu, Hao; Xu, Tao; Wang, Zilu
- Nature Communications, Vol. 4, Issue 1
Works referencing / citing this record:
Inhomogeneous photocarrier dynamics and transport in monolayer MoS 2 by ultrafast microscopy
journal, September 2019
- Yu, Kuai; Wang, Junzhong; Chen, Jing
- Nanotechnology, Vol. 30, Issue 48