skip to main content

DOE PAGESDOE PAGES

Title: Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman

Very high nonmonotonic thickness-dependent hot carrier diffusivity of MoS 2 in a normal- κ dielectric screening environment was discovered by ET-Raman technique.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Department of Mechanical Engineering, Iowa State University, Ames, USA
  2. School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing, China
Publication Date:
Grant/Contract Number:
DENE0000671
Type:
Published Article
Journal Name:
RSC Advances
Additional Journal Information:
Journal Name: RSC Advances Journal Volume: 8 Journal Issue: 23; Journal ID: ISSN 2046-2069
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1431157

Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, and Wang, Xinwei. Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman. United Kingdom: N. p., Web. doi:10.1039/C8RA01106K.
Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, & Wang, Xinwei. Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman. United Kingdom. doi:10.1039/C8RA01106K.
Yuan, Pengyu, Tan, Hong, Wang, Ridong, Wang, Tianyu, and Wang, Xinwei. 2018. "Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman". United Kingdom. doi:10.1039/C8RA01106K.
@article{osti_1431157,
title = {Very fast hot carrier diffusion in unconstrained MoS 2 on a glass substrate: discovered by picosecond ET-Raman},
author = {Yuan, Pengyu and Tan, Hong and Wang, Ridong and Wang, Tianyu and Wang, Xinwei},
abstractNote = {Very high nonmonotonic thickness-dependent hot carrier diffusivity of MoS 2 in a normal- κ dielectric screening environment was discovered by ET-Raman technique.},
doi = {10.1039/C8RA01106K},
journal = {RSC Advances},
number = 23,
volume = 8,
place = {United Kingdom},
year = {2018},
month = {1}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates
journal, November 2003
  • McAlpine, Michael C.; Friedman, Robin S.; Jin, Song
  • Nano Letters, Vol. 3, Issue 11, p. 1531-1535
  • DOI: 10.1021/nl0346427

Van der Waals heterostructures
journal, July 2013
  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Single-layer MoS2 transistors
journal, January 2011
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012
  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
journal, September 2011
  • Liu, Leitao; Kumar, S. Bala; Ouyang, Yijian
  • IEEE Transactions on Electron Devices, Vol. 58, Issue 9, p. 3042-3047
  • DOI: 10.1109/TED.2011.2159221