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This content will become publicly available on April 2, 2019

Title: Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1] ; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA
  2. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA, Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  3. Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  4. Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095 USA
Publication Date:
Grant/Contract Number:
SC0008931
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 21; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1431136

Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany: N. p., Web. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, & Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. 2018. "Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors". Germany. doi:10.1002/adma.201705934.
@article{osti_1431136,
title = {Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors},
author = {Guo, Jian and Liu, Yuan and Ma, Yue and Zhu, Enbo and Lee, Shannon and Lu, Zixuan and Zhao, Zipeng and Xu, Changhao and Lee, Sung-Joon and Wu, Hao and Kovnir, Kirill and Huang, Yu and Duan, Xiangfeng},
abstractNote = {},
doi = {10.1002/adma.201705934},
journal = {Advanced Materials},
number = 21,
volume = 30,
place = {Germany},
year = {2018},
month = {4}
}

Works referenced in this record:

Screening and interlayer coupling in multilayer MoS2
journal, March 2013
  • Das, Saptarshi; Appenzeller, Joerg
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 4, p. 268-273
  • DOI: 10.1002/pssr.201307015

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Single-layer MoS2 transistors
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High Performance Multilayer MoS2Transistors with Scandium Contacts
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