Title: Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors

Abstract

Abstract The family of 2D semiconductors (2DSCs) has grown rapidly since the first isolation of graphene. The emergence of each 2DSC material brings considerable excitement for its unique electrical, optical, and mechanical properties, which are often highly distinct from their 3D counterparts. To date, studies of 2DSC are majorly focused on group IV (e.g., graphene, silicene), group V (e.g., phosphorene), or group VIB compounds (transition metal dichalcogenides, TMD), and have inspired considerable effort in searching for novel 2DSCs. Here, the first electrical characterization of group IV–V compounds is presented by investigating few‐layer GeAs field‐effect transistors. With back‐gate device geometry, p‐type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm ² V ⁻¹ s ⁻¹ with ON–OFF ratio over 10 ⁵ , comparable well with state‐of‐the‐art TMD devices. With the unique crystal structure the few‐layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 µm radiation with a photoresponsivity of 6 A W ⁻¹ and a rise and fall time of ≈3 ms. This study of group IV–V 2DSC materials greatly expands the 2D family, and can enablemore » new opportunities in functional electronics and optoelectronics based on 2DSCs.« less

Authors:

Guo, Jian ^[1]; Liu, Yuan ^[1]; Ma, Yue ^[1]; Zhu, Enbo ^[1]; Lee, Shannon ^[2]; Lu, Zixuan ^[1]; Zhao, Zipeng ^[1]; Xu, Changhao ^[1]; Lee, Sung‐Joon ^[1]; Wu, Hao ^[1]; Kovnir, Kirill ^[3]; Huang, Yu ^[1]; Duan, Xiangfeng  ^[4]

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+ Show Author Affiliations

1. Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA
2. Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA, Department of Chemistry Iowa State University, and Ames Laboratory Ames IA 50011 USA
3. Department of Chemistry Iowa State University, and Ames Laboratory Ames IA 50011 USA
4. Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA

Publication Date:

Mon Apr 02 00:00:00 EDT 2018

Sponsoring Org.:

USDOE

OSTI Identifier:

1431136

Grant/Contract Number:  

DE‐SC0008931

Resource Type:

Publisher's Accepted Manuscript

Journal Name:

Advanced Materials

Additional Journal Information:

Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 21; Journal ID: ISSN 0935-9648

Publisher:

Wiley Blackwell (John Wiley & Sons)

Country of Publication:

Germany

Language:

English