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This content will become publicly available on April 2, 2019

Title: Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1] ; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA
  2. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA, Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  3. Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  4. Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095 USA
Publication Date:
Grant/Contract Number:
SC0008931
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 21; Related Information: CHORUS Timestamp: 2018-05-31 15:03:02; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1431136