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Title: Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [1]; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA
  2. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA, Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  3. Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  4. Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1431136
Grant/Contract Number:  
SC0008931
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 21; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany: N. p., 2018. Web. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, & Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Mon . "Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors". Germany. doi:10.1002/adma.201705934.
@article{osti_1431136,
title = {Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors},
author = {Guo, Jian and Liu, Yuan and Ma, Yue and Zhu, Enbo and Lee, Shannon and Lu, Zixuan and Zhao, Zipeng and Xu, Changhao and Lee, Sung-Joon and Wu, Hao and Kovnir, Kirill and Huang, Yu and Duan, Xiangfeng},
abstractNote = {},
doi = {10.1002/adma.201705934},
journal = {Advanced Materials},
number = 21,
volume = 30,
place = {Germany},
year = {2018},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/adma.201705934

Citation Metrics:
Cited by: 6 works
Citation information provided by
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Works referenced in this record:

Electron Counting and a Large Family of Two-Dimensional Semiconductors
journal, March 2016


Channel Length Scaling of MoS 2 MOSFETs
journal, September 2012

  • Liu, Han; Neal, Adam T.; Ye, Peide D.
  • ACS Nano, Vol. 6, Issue 10
  • DOI: 10.1021/nn303513c

Screening and interlayer coupling in multilayer MoS2
journal, March 2013

  • Das, Saptarshi; Appenzeller, Joerg
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 4, p. 268-273
  • DOI: 10.1002/pssr.201307015

MoS2 transistors with 1-nanometer gate lengths
journal, October 2016


The indirect to direct band gap transition in multilayered MoS 2 as predicted by screened hybrid density functional theory
journal, December 2011

  • Ellis, Jason K.; Lucero, Melissa J.; Scuseria, Gustavo E.
  • Applied Physics Letters, Vol. 99, Issue 26
  • DOI: 10.1063/1.3672219

Mobility anisotropy in monolayer black phosphorus due to scattering by charged impurities
journal, April 2016


Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
journal, December 2012

  • Yu, Woo Jong; Li, Zheng; Zhou, Hailong
  • Nature Materials, Vol. 12, Issue 3
  • DOI: 10.1038/nmat3518

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Optical Absorption, Reflectivity, and Electrical Conductivity in GeAs and Ge As 2
journal, April 1971


Tunneling Transistors Based on Graphene and 2-D Crystals
journal, June 2013


Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction
journal, February 2010


Tunable Bandgap in Silicene and Germanene
journal, December 2011

  • Ni, Zeyuan; Liu, Qihang; Tang, Kechao
  • Nano Letters, Vol. 12, Issue 1
  • DOI: 10.1021/nl203065e

Das System Gallium-Tellur
journal, November 1985


Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films
journal, January 2016


Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

How Good Can Monolayer MoS 2 Transistors Be?
journal, September 2011

  • Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef
  • Nano Letters, Vol. 11, Issue 9
  • DOI: 10.1021/nl2018178

Graphene and beyond-graphene 2D crystals for next-generation green electronics
conference, June 2014

  • Kang, Jiahao; Cao, Wei; Xie, Xuejun
  • SPIE Defense + Security, SPIE Proceedings
  • DOI: 10.1117/12.2051198

Two-dimensional semiconductors with possible high room temperature mobility
journal, September 2014


Erratum: Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles
journal, April 2017

  • Zhao, Tianqi; Shi, Wen; Xi, Jinyang
  • Scientific Reports, Vol. 7, Issue 1
  • DOI: 10.1038/srep46200

Heterostructures based on two-dimensional layered materials and their potential applications
journal, July 2016


Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
journal, October 2014

  • Cheng, Rui; Jiang, Shan; Chen, Yu
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms6143

GeAs: Highly Anisotropic van der Waals Thermoelectric Material
journal, April 2016


Electrical breakdown of multilayer MoS 2 field-effect transistors with thickness-dependent mobility
journal, January 2014

  • Yang, Rui; Wang, Zenghui; Feng, Philip X. -L.
  • Nanoscale, Vol. 6, Issue 21
  • DOI: 10.1039/C4NR03472D

Electronics based on two-dimensional materials
journal, October 2014

  • Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe
  • Nature Nanotechnology, Vol. 9, Issue 10
  • DOI: 10.1038/nnano.2014.207

Epitaxial growth of large area single-crystalline few-layer MoS 2 with high space charge mobility of 192 cm 2 V −1 s −1
journal, August 2014

  • Ma, Lu; Nath, Digbijoy N.; Lee, Edwin W.
  • Applied Physics Letters, Vol. 105, Issue 7
  • DOI: 10.1063/1.4893143

Phonons in SiAs: Raman scattering study and DFT calculations
journal, May 2011

  • Kutzner, Jürgen; Kortus, Jens; Pätzold, Olf
  • Journal of Raman Spectroscopy, Vol. 42, Issue 12
  • DOI: 10.1002/jrs.2976

Van der Waals Density Functional for Layered Structures
journal, September 2003


High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012

  • Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms2018

The role of dislocation scattering in n -type GaN films
journal, August 1998

  • Ng, H. M.; Doppalapudi, D.; Moustakas, T. D.
  • Applied Physics Letters, Vol. 73, Issue 6
  • DOI: 10.1063/1.122012

Black phosphorus field-effect transistors
journal, March 2014


Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
journal, July 2013

  • Li, Song-Lin; Wakabayashi, Katsunori; Xu, Yong
  • Nano Letters, Vol. 13, Issue 8
  • DOI: 10.1021/nl4010783

Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping
journal, November 2016


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Electron mobility behavior in extremely thin SOI MOSFET's
journal, November 1995

  • Jin-Hyeok Choi,
  • IEEE Electron Device Letters, Vol. 16, Issue 11
  • DOI: 10.1109/55.468289

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v