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Title: Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2O 3 nanowires

Abstract

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In 2O 3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In 2O 3 nanostructure based device characteristics for potential optoelectronic applications. In 2O 3 nanowires with cubic crystal structure (c-In 2O 3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ( V O) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has beenmore » discussed. Lastly, our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.« less

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [2];  [2];  [1];  [1]
  1. Univ. of Illinois at Chicago, Chicago, IL (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1430710
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 29; Journal Issue: 17; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; indium oxide; nanowires; vapor–liquid–solid method; defects; near-band-edge emission; degenerate; photoluminesence broadening

Citation Formats

Mukherjee, Souvik, Sarkar, Ketaki, Wiederrecht, Gary P., Schaller, Richard D., Gosztola, David J., Stroscio, Michael A., and Dutta, Mitra. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires. United States: N. p., 2018. Web. doi:10.1088/1361-6528/aaaf34.
Mukherjee, Souvik, Sarkar, Ketaki, Wiederrecht, Gary P., Schaller, Richard D., Gosztola, David J., Stroscio, Michael A., & Dutta, Mitra. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires. United States. doi:10.1088/1361-6528/aaaf34.
Mukherjee, Souvik, Sarkar, Ketaki, Wiederrecht, Gary P., Schaller, Richard D., Gosztola, David J., Stroscio, Michael A., and Dutta, Mitra. Thu . "Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires". United States. doi:10.1088/1361-6528/aaaf34. https://www.osti.gov/servlets/purl/1430710.
@article{osti_1430710,
title = {Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires},
author = {Mukherjee, Souvik and Sarkar, Ketaki and Wiederrecht, Gary P. and Schaller, Richard D. and Gosztola, David J. and Stroscio, Michael A. and Dutta, Mitra},
abstractNote = {We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Lastly, our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.},
doi = {10.1088/1361-6528/aaaf34},
journal = {Nanotechnology},
number = 17,
volume = 29,
place = {United States},
year = {2018},
month = {3}
}

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