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Title: Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

Abstract

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h -1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

Authors:
 [1];  [1];  [2]; ORCiD logo [1];  [3]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [4];  [4];  [4];  [5]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering,
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering,
  4. Rice Univ., Houston, TX (United States). Dept. of Materials Science and Nanoengineering and Dept. of Chemistry
  5. New Mexico State Univ., Las Cruces, NM (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Department of the Navy, Office of Naval Research (ONR)
OSTI Identifier:
1430625
Grant/Contract Number:  
AC05-00OR22725; AR0000651; SC0012547
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 17; Journal ID: ISSN 1476-1122
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Vlassiouk, Ivan V., Stehle, Yijing, Pudasaini, Pushpa Raj, Unocic, Raymond R., Rack, Philip D., Baddorf, Arthur P., Ivanov, Ilia N., Lavrik, Nickolay V., List, Frederick, Gupta, Nitant, Bets, Ksenia V., Yakobson, Boris I., and Smirnov, Sergei N. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates. United States: N. p., 2018. Web. doi:10.1038/s41563-018-0019-3.
Vlassiouk, Ivan V., Stehle, Yijing, Pudasaini, Pushpa Raj, Unocic, Raymond R., Rack, Philip D., Baddorf, Arthur P., Ivanov, Ilia N., Lavrik, Nickolay V., List, Frederick, Gupta, Nitant, Bets, Ksenia V., Yakobson, Boris I., & Smirnov, Sergei N. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates. United States. doi:10.1038/s41563-018-0019-3.
Vlassiouk, Ivan V., Stehle, Yijing, Pudasaini, Pushpa Raj, Unocic, Raymond R., Rack, Philip D., Baddorf, Arthur P., Ivanov, Ilia N., Lavrik, Nickolay V., List, Frederick, Gupta, Nitant, Bets, Ksenia V., Yakobson, Boris I., and Smirnov, Sergei N. Mon . "Evolutionary selection growth of two-dimensional materials on polycrystalline substrates". United States. doi:10.1038/s41563-018-0019-3. https://www.osti.gov/servlets/purl/1430625.
@article{osti_1430625,
title = {Evolutionary selection growth of two-dimensional materials on polycrystalline substrates},
author = {Vlassiouk, Ivan V. and Stehle, Yijing and Pudasaini, Pushpa Raj and Unocic, Raymond R. and Rack, Philip D. and Baddorf, Arthur P. and Ivanov, Ilia N. and Lavrik, Nickolay V. and List, Frederick and Gupta, Nitant and Bets, Ksenia V. and Yakobson, Boris I. and Smirnov, Sergei N.},
abstractNote = {There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.},
doi = {10.1038/s41563-018-0019-3},
journal = {Nature Materials},
number = ,
volume = 17,
place = {United States},
year = {2018},
month = {3}
}

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    Works referencing / citing this record:

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