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Title: Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

Abstract

Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here in this paper, it is found that the concentration of oxygen vacancies (V O) formed in LaNiO 3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the V O concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division, and Neutron Scattering Division
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division, and Neutron Scattering Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1430611
Alternate Identifier(s):
OSTI ID: 1424519; OSTI ID: 1466314
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 15; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ionic rectification; nickelates; orbital polarization; oxygen diode; oxygen vacancies; optical conductivity; oxygen stoichiometry; x-ray absorption

Citation Formats

Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., and Lee, Ho Nyung. Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch. United States: N. p., 2018. Web. doi:10.1002/adma.201705904.
Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., & Lee, Ho Nyung. Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch. United States. doi:10.1002/adma.201705904.
Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., and Lee, Ho Nyung. Wed . "Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch". United States. doi:10.1002/adma.201705904. https://www.osti.gov/servlets/purl/1430611.
@article{osti_1430611,
title = {Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch},
author = {Guo, Erjia and Liu, Yaohua and Sohn, Changhee and Desautels, Ryan D. and Herklotz, Andreas and Liao, Zhaoliang and Nichols, John A. and Freeland, John and Fitzsimmons, Michael R. and Lee, Ho Nyung},
abstractNote = {Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here in this paper, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.},
doi = {10.1002/adma.201705904},
journal = {Advanced Materials},
number = 15,
volume = 30,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 4 works
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Figures / Tables:

Table I Table I: A summary of the oxygen vacancy formation energy and migration energy for LaNiO3, BaTiO3, LaAlO3, and SrTiO3 measured/calculations using a variety of methods and techniques on different sample types (e. g., thin films, bulks, and heterostructures).

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.