Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch
Abstract
Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here in this paper, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal-insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called oxygen diode, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.
- Authors:
-
[1];
[1];
[1];
[1];
[1];
[1];
[1];
[3];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division, and Neutron Scattering Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division, and Neutron Scattering Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1430611
- Alternate Identifier(s):
- OSTI ID: 1424519; OSTI ID: 1466314
- Grant/Contract Number:
- AC05-00OR22725; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 30; Journal Issue: 15; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ionic rectification; nickelates; orbital polarization; oxygen diode; oxygen vacancies; optical conductivity; oxygen stoichiometry; x-ray absorption
Citation Formats
Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., and Lee, Ho Nyung. Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch. United States: N. p., 2018.
Web. doi:10.1002/adma.201705904.
Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., & Lee, Ho Nyung. Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch. United States. https://doi.org/10.1002/adma.201705904
Guo, Erjia, Liu, Yaohua, Sohn, Changhee, Desautels, Ryan D., Herklotz, Andreas, Liao, Zhaoliang, Nichols, John A., Freeland, John, Fitzsimmons, Michael R., and Lee, Ho Nyung. Wed .
"Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch". United States. https://doi.org/10.1002/adma.201705904. https://www.osti.gov/servlets/purl/1430611.
@article{osti_1430611,
title = {Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch},
author = {Guo, Erjia and Liu, Yaohua and Sohn, Changhee and Desautels, Ryan D. and Herklotz, Andreas and Liao, Zhaoliang and Nichols, John A. and Freeland, John and Fitzsimmons, Michael R. and Lee, Ho Nyung},
abstractNote = {Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here in this paper, it is found that the concentration of oxygen vacancies (VO) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal-insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called oxygen diode, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.},
doi = {10.1002/adma.201705904},
journal = {Advanced Materials},
number = 15,
volume = 30,
place = {United States},
year = {Wed Mar 07 00:00:00 EST 2018},
month = {Wed Mar 07 00:00:00 EST 2018}
}
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Figures / Tables:
Table I: A summary of the oxygen vacancy formation energy and migration energy for LaNiO3, BaTiO3, LaAlO3, and SrTiO3 measured/calculations using a variety of methods and techniques on different sample types (e. g., thin films, bulks, and heterostructures).
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Works referencing / citing this record:
Tuning Bifunctional Oxygen Electrocatalysts by Changing the A-Site Rare-Earth Element in Perovskite Nickelates
journal, August 2018
- Wang, Le; Stoerzinger, Kelsey A.; Chang, Lei
- Advanced Functional Materials, Vol. 28, Issue 39
Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface
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Large orbital polarization in nickelate-cuprate heterostructures by dimensional control of oxygen coordination
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- Liao, Zhaoliang; Skoropata, Elizabeth; Freeland, J. W.
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Experimental setup combining in situ hard X-ray photoelectron spectroscopy and real-time surface X-ray diffraction for characterizing atomic and electronic structure evolution during complex oxide heterostructure growth
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Large orbital polarization in nickelate-cuprate heterostructures by dimensional control of oxygen coordination
journal, February 2019
- Liao, Zhaoliang; Skoropata, Elizabeth; Freeland, J. W.
- Nature Communications, Vol. 10, Issue 1
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